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E251 Datasheet | Specifications & PDF Download

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E251 Tube

page 1 2 3 E251 sheet 20 21 FP date ±1925 ±192.

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NE25118 - DUAL-GATE GaAS MESFET

GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER • LOW CRSS: 0.02 pF (TYP) • HIGH POWER GAIN: 20 dB (TYP
Rating: 1 (5 votes)
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NE25139 - DUAL-GATE GaAS MESFET

GENERAL PURPOSE DUAL-GATE GaAS MESFET NE25139 Power DISCONTINU Gain,GPSE (dB) D Noise Figure, NF (dB) FEATURES • SUITABLE FOR USE AS RF AMPLIFIER I
Rating: 1 (4 votes)
TSF

E251 - Tube

page 1 2 3 E251 sheet 20 21 FP date ±1925 ±1925 2000.02.26
Rating: 1 (3 votes)
Matsuki Logo Matsuki

ME2514 - N-Channel MOSFET

N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME2514 is the N-Channel logic enhancement mode power field effect transistors are produced using h
Rating: 1 (3 votes)
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