E251 Datasheet | Specifications & PDF Download

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NTE2515 (NPN) & NTE2516 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Collector Emitter Saturation Voltage D High Gain–

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NTE2510 Silicon NPNTransistor High Frequency Video Output Features: D High Gain Bandwidth Product: fT = 2GHz D High Current Capacity: IC = 500mA Appli

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GENERAL PURPOSE DUAL-GATE GaAS MESFET NE25139 Power DISCONTINU Gain,GPSE (dB) D Noise Figure, NF (dB) FEATURES • SUITABLE FOR USE AS RF AMPLIFIER I

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NTE2511 (NPN) & NTE2512 (PNP) Silicon Complementary Transistors High Frequency Video Output for HDTV Features: D High Gain Bandwidth Product: fT = 800

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GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER • LOW CRSS: 0.02 pF (TYP) • HIGH POWER GAIN: 20 dB (TYP

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DATA SHEET CURRENT SENSOR - LOW TCR PE series 5%, 1% sizes 0603/0805/1206/2010/2512/4527 RoHS compliant & Halogen free Product specification – August

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NTE2511 (NPN) & NTE2512 (PNP) Silicon Complementary Transistors High Frequency Video Output for HDTV Features: D High Gain Bandwidth Product: fT = 80

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NTE2513 (NPN) & NTE2514 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Collector Emitter Saturation Voltage D High Gain–

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NTE2515 (NPN) & NTE2516 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Collector Emitter Saturation Voltage D High Gain–B

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NTE2519 (NPN) & NTE2520 (PNP) Silicon Complementary Transistors High Voltage Driver Features: D High Breakdown Voltage D Large Current Capacity D Isol

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

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NTE2517 (NPN) & NTE2518 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Saturation Voltage D High Current Capacity and Wi

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NTE2513 (NPN) & NTE2514 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Collector Emitter Saturation Voltage D High Gain–B

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NTE2517 (NPN) & NTE2518 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Saturation Voltage D High Current Capacity and Wid

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N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME2514 is the N-Channel logic enhancement mode power field effect transistors are produced using h

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NTE251 (NPN) & NTE252 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE251 (NPN) and NTE252 (PNP) are silicon co

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SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair V 2.00 MA4E2514 Series Case Style 1116 Features A Extremely Low Parasitic Capi

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Product Folder Order Now Technical Documents Tools & Software Support & Community Reference Design MSP430AFE253, MSP430AFE252, MSP430AFE251 MSP4

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

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