E305 Datasheet | Specifications & PDF Download

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http://www.ncepower.com Pb Free Product NCE3050 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050 uses advanced trench technology

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Pb Free Product http://www.ncepower.com NCE3050K NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE3050K uses advanced trench technolo

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MJE2955T ® MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION

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isc Silicon NPN Power Transistor MJE3055T DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·High DC Current Gain- : hFE= 20-1

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors MJE3055 TRANSISTOR (NPN) FEATURES Power dissipation PCM:

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MJE3055 High-reliability discrete products and engineering services since 1977 NPN SILICON POWER TRANSISTOR FEATURES  Available as “HR” (high reli

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MJE2955T ® MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s COMPLEMENTARY PNP - NPN DEVICES DESCRIPTIO

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MJE2955T (PNP and MJE3055T (NPN) Silicon Complementary Transistors Audio Power Amp, Switch TO−220 Type Package Description: The MJE2955T (PNP) and MJ

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MJE2955T (PNP), MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and sw

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isc Silicon NPN Power Transistor MJE3055 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·High DC Current Gain- : hFE= 20-10

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UNISONIC TECHNOLOGIES CO., LTD MJE3055T NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR  DESCRIPTION The UTC MJE3055T is designed for general purp

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE2955T/D Complementary Silicon Plastic Power Transistors MJE2955T * NPN MJE3055T *

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TIGER ELECTRONIC CO.,LTD E Product specification Complementary Silicon Power Ttransistors MJE3055T / MJE2955T DESCRIPTION It is intented for use in

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PE3050K N-Channel Enhancement Mode Power MOSFET Description The PE3050K uses advanced trench technology and design to provide excellent RDS(ON) with

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MJE2955T (PNP), MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and sw

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NTE3051 0.27” Polarity and Overflow Numeric Display, Common Anode Description: The NTE3051 display is mounted on a lead–frame assembly which is then c

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NTE3052 thru NTE3055 0.3” Single Digit Numeric Display, Seven Segment, Common Anode Description: The NTE3052 through NTE3055 are 0.3 inch (7.62mm) hei

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