E305 Datasheet | Specifications & PDF Download

Pb Free Product http://www.ncepower.com NCE3050K NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE3050K uses advanced trench technolo

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MJE3055T MJE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz

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www.DataSheet4U.com MJE3055T/MJE2955T GENERAL DESCRIPTION Complementary, high power transistors in a plastic envelope, primarily for use in audio and

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MJE2955T ® MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION

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http://www.ncepower.com Pb Free Product NCE3050 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050 uses advanced trench technology

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ADE3000 ADE3050 ADE3100 ADE3200 ADE3250 ADE3300 ® LCD Display Engines with Integrated DVI, ADC and YUV Ports The ADE3xxx is a family of highly integr

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UNISONIC TECHNOLOGIES CO., LTD MJE3055T NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR  DESCRIPTION The UTC MJE3055T is designed for general purp

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isc Silicon NPN Power Transistor MJE3055 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·High DC Current Gain- : hFE= 20-10

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isc Silicon NPN Power Transistor MJE3055AT DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) ·High DC Current Gain- : hFE= 150

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NPN POWER TRANSISTORS GE3055P 80 VOLTS 10 AMP, 70 WATTS General purpose transistor designed for power regulator, switching and solenoid drive applic

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http://www.ncepower.com Pb Free Product NCE3050I NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE3050I uses advanced trench technolog

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HI-SINCERITY MICROELECTRONICS CORP. HMJE3055T NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6737 Issued Date : 1993.09.24 Revised Date : 2004.11.19 P

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MJE3055T MJE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz

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VRE3050 Precision Voltage Reference RoHS COMPLIANT FEATURES • +5 V Output, ± 0.5 mV (0.01%) • Temperature Drift: 0.6 ppm/°C • Low Noise: 3 μVP-P (0

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http://www.ncepower.com Pb Free Product NCE3055 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3055 uses advanced trench technology

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