o1ft M n-channel JFETs IU ol1l:I' designed for.
MJE3055T - COMPLEMENTARY SILICON POWER TRANSISTORS
MJE2955T ® MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION .E3055T - MJE3055T
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www.DataSheet4U.com www.DataSheet4U.com .NCE3050 - NCE N-Channel Enhancement Mode Power MOSFET
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MJE3055T MJE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz.MJE3055T - Complementary Silicon Plastic Power Transistors
MJE2955T (PNP), MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and sw.MJE3055 - COMPLEMENTARY SILICON POWER TRANSISTORS
MJE2955T ® MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s COMPLEMENTARY PNP - NPN DEVICES DESCRIPTIO.MJE3055T - NPN PLASTIC POWER TRANSISTORS
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS MJE2955T PNP MJE3055T NPN TO-220.MJE3055T - NPN Transistor
isc Silicon NPN Power Transistor MJE3055T DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·High DC Current Gain- : hFE= 20-1.NTE3050 - (NTE30xx) LED Displays
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isc Silicon NPN Power Transistor MJE3055AT DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) ·High DC Current Gain- : hFE= 150.MJE3055T - Complementary Power Transistors
MJE2955T, 3055T Complementary Power Transistors Complementary Silicon Power Transistors are designed for use in general-purpose amplifier and switchin.MJE3055T - Silicon NPN Power Transistors
SavantIC Semiconductor Silicon NPN Power Transistors Product Specification MJE3055T DESCRIPTION ·With TO-220 package ·Complement to type MJE2955T ·D.MJE3055A - Complementary Silicon power transistors
SEMICONDUCTOR MJE3055A(NPN) MJE2955A(PNP) RRooHHSS Nell High Power Products Complementary Silicon power transistors (10A / 60V / 75W) FEATURES Des.NTCLE305E4202SB - NTC Thermistors
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PE3050K N-Channel Enhancement Mode Power MOSFET Description The PE3050K uses advanced trench technology and design to provide excellent RDS(ON) with .HMJE3055T - NPN EPITAXIAL PLANAR TRANSISTOR
HI-SINCERITY MICROELECTRONICS CORP. HMJE3055T NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6737 Issued Date : 1993.09.24 Revised Date : 2004.11.19 P.