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Programmable Clock Generator 5P49V5907 DATASHEET Description The 5P49V5907 is a programmable clock generator intended for high performance consumer

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A Business Partner of Renesas Electronics Corporation. Preliminary PS9505,PS9505L1, PS9505L2,PS9505L3 2.5 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Cor

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www.DataSheet4U.com HD74LS165A Parallel-Load 8-bit Shift Register REJ03D0449–0300 Rev.3.00 Jul.15.2005 The LS165A are 8-bit serial shift registers th

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www.vishay.com 1N5417, 1N5418 Vishay Semiconductors Fast Avalanche Sinterglass Diode 949588 DESIGN SUPPORT TOOLS click logo to get started Models A

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DATASHEET CA3140, CA3140A 4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output FN957 Rev.10.00 Jul 11, 2005 The CA3140A and CA3140

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DATASHEET CA3140, CA3140A 4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output FN957 Rev.10.00 Jul 11, 2005 The CA3140A and CA3140

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HD74LS166A 8-bit Shift Register REJ03D0450-0400 Rev.4.00 May 10, 2006 The inputs are buffered to lower the drive requirements to one series 74 or 7

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S420D Vishay Telefunken Silicon Mesa SMD Rectifier Features D D D D Soft recovery characteristics Glass passivated junction Low reverse current Deliv

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2138, 2SK2138-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2138, 2SK2138-Z is N-ch

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H5N2521FN Silicon N Channel MOS FET High Speed Power Switching REJ03G1619-0101 Rev.1.01 May 13, 2008 Features • Low on-resistance • Low leakage curre

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2SC458, 2SC2308 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SA1029 and 2SA1030 Outline RENESAS Package code

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www.DataSheet4U.com RJK5026DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1734-0100 Rev.1.00 Sep 11, 2008 Features • Low on-resistan

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www.DataSheet.co.kr REJ09B0278-0210 16 R8C/26 Group, R8C/27 Group Hardware Manual RENESAS 16-BIT SINGLE-CHIP MCU R8C FAMILY / R8C/2x SERIES All in

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Preliminary Datasheet RJP6065DPM Silicon N Channel IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) =

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April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat

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www.DataSheet4U.com RKZ-KL Series Silicon Planar Zener Diode for Surge Absorption and Stabilizer REJ03G1519-0100 Rev.1.00 May 09, 2007 Features • Em

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Cor

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R8C/2C Group, R8C/2D Group RENESAS MCU REJ03B0183-0210 Rev.2.10 Dec 05, 2007 1. 1.1 Overview Features The R8C/2C Group and R8C/2D Group of single-

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2SD667, 2SD667A Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB647/A Outline RENESAS Package code: PRS

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