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EMS256K8B - 2Mb CMOS Static SRAM
www.DataSheet4U.com www.DataSheet4U.com .TMD74HCT374 - (TMDx4HCT37x) 3 State Octal D-Flip-Flops
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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 120mΩ(Max) ·Fast Sw.IXTQ200N10T - N-ChannelMOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.5mΩ(Max) ·Fast Sw.520.47 - Dual-Bridge Sensor Signal Processor
Dual-Bridge Sensor Signal Processor with SENT Interface PRODUCT PREVIEW – May 18, 2018 520.47 Features and Benefits • Supply voltage: 4.75 V to 5.25.TMD54HCT374 - (TMDx4HCT37x) 3 State Octal D-Flip-Flops
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www.DataSheet4U.com DataShee DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataShee DataSheet4U.com DataShe.MIL-STD-1275B - Elmo Compliance
www.DataSheet4U.com Elmo Compliance with MIL-STD-1275B February 2007- Ver. 1.0 www.DataSheet4U.com Elmo Compliance with MIL-STD-1275B CHARACTERIS.E910.27A - External Adjustable High Efficiency PFM Step-Down Converter
www.DataSheet4U.com - Preliminary - E910.27A External Adjustable High Efficiency PFM Step-Down Converter Features • • • • • • • • • • • • • • Brie.IXTQ470P2 - N-ChannelMOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 145mΩ(Max) ·Fast Sw.IXTQ240N055T - N-ChannelMOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.6mΩ(Max) ·Fast Swi.IXTQ220N055T - N-ChannelMOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4mΩ(Max) ·Fast Switc.IXTQ180N085T - N-ChannelMOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.5mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.IXTQ180N10T - N-ChannelMOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7mΩ(Max) ·Fast Swit.IXTQ120N15P - N-ChannelMOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 16mΩ(Max) ·Fast Swi.IXTQ110N055P - N-ChannelMOSFET
isc N-Channel MOSFET Transistor IXTQ110N055P ·FEATURES ·Drain Current ID=110A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source O.IXTQ120N20P - N-ChannelMOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max) ·Fast Swi.IXTQ130N20T - N-ChannelMOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 16mΩ(Max) ·Fast Swi.IXTQ130N15T - N-ChannelMOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 12mΩ(Max) ·Fast Swi.IXTQ140N10P - N-ChannelMOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 11mΩ(Max) ·Fast Swi.