IXTQ200N10T - N-ChannelMOSFET
IXTQ200N10T Features
* Drain Source Voltage- : VDSS= 100V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 5.5mΩ(Max)
* Fast Switching
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* APPLICATIONS
* Switch-Mode and Resonant-Mode Powe
