IXTQ182N055T N-ChannelMOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number: IXTQ182N055T
Manufacturer: INCHANGE
File Size: 252.78 KB
Datasheet: IXTQ182N055T-INCHANGE.pdf
Description: N-ChannelMOSFET

Features

* Drain Source Voltage- : VDSS= 55V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 3.3mΩ(Max)
* Fast Switching
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching Voltage Regulators
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 55 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 260 A IDM Drain Current-Single Plused 780 A PD Total Dissipation @TC=25℃ 480

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IXTQ182N055T N-ChannelMOSFET INCHANGE

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