* International Standard Packages 175°C Operating Temperature Avalanche Rated Fast Intrinsic Rectifier Low RDS(on) Advantages Easy to Mount Space Savings High Power Density Applications Automotive - Motor Drives - DC/DC Conversion - 42V Power Bus - ABS Systems DC/DC Converters and Off-Line UPS Primary
IXTQ180N085T Datasheet (165.03 KB)
IXTQ180N085T
IXYS Corporation
165.03 KB
Power mosfet.
TrenchMVTM Power MOSFET
IXTH180N085T IXTQ180N085T
N-Channel Enhancement Mode Avalanche rated Fast Intrinsic Rectifier
VDSS = 85V ID25 = 180A ≤RDS(o.
📁 Related Datasheet
IXTQ180N085T - N-ChannelMOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 5.5mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.
IXTQ180N055T - (IXTP180N055T / IXTA180N055T / IXTQ180N055T) Trench Gate Power MOSFET
(IXYS Corporation)
Advance Technical Information
Trench Gate Power MOSFET
N-Channel Enhancement Mode
IXTQ 180N055T IXTA 180N055T IXTP 180N055T
VDSS ID25
RDS(on)
= 55.
IXTQ180N10T - Power MOSFET
(IXYS Corporation)
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTH180N10T IXTQ180N10T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on).
IXTQ180N10T - N-ChannelMOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 7mΩ(Max) ·Fast Swit.
IXTQ182N055T - Power MOSFET
(IXYS Corporation)
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTH182N055T IXTQ182N055T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(o.
IXTQ182N055T - N-ChannelMOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 55V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 3.3mΩ(Max) ·Fast Swi.
IXTQ18N60P - Power MOSFET
(IXYS)
PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTQ 18N60P IXTV 18N60P IXTV 18N60PS
V = 600 V DSS
ID25 = 18 A ≤ RDS(on) 420 mΩ
S.
IXTQ18N60P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 420mΩ(Max) ·Fast Sw.
