Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 180N055T IXTA 180N055T IXTP 180N055T VDSS ID25 RDS(on) = 55 V = 180 A = 4.0 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGSM ID25 IDRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings 55 55 ± 20 V V V TO-220 (IXTP) 180 75 600 75 1.0 3 360 -55 +175 175 -55 +150 A A A A G (TAB) G D S (TAB) TC = 25°C External lead current limit TC = 25°C, pulse
IXTP180N055T_IXYSCorporation.pdf
Datasheet Details
Part number:
IXTQ180N055T, IXTP180N055T
Manufacturer:
IXYS Corporation
File Size:
117.16 KB
Description:
(ixtp180n055t / ixta180n055t / ixtq180n055t) trench gate power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXTQ180N055T, IXTP180N055T.
Please refer to the document for exact specifications by model.