* z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 1 mA VGS = ±20 VDC, VDS = 0 VD
IXTQ180N055T Datasheet (117.16 KB)
IXTQ180N055T
IXYS Corporation
117.16 KB
(ixtp180n055t / ixta180n055t / ixtq180n055t) trench gate power mosfet.
Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 180N055T IXTA 180N055T IXTP 180N055T VDSS ID25 RDS(on) = 55.
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