IXTQ180N055T, IXTP180N055T Datasheet - IXYS Corporation

IXTQ180N055T (IXTP180N055T / IXTA180N055T / IXTQ180N055T) Trench Gate Power MOSFET

Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 180N055T IXTA 180N055T IXTP 180N055T VDSS ID25 RDS(on) = 55 V = 180 A = 4.0 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGSM ID25 IDRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings 55 55 ± 20 V V V TO-220 (IXTP) 180 75 600 75 1.0 3 360 -55 +175 175 -55 +150 A A A A G (TAB) G D S (TAB) TC = 25°C External lead current limit TC = 25°C, pulse.

IXTQ180N055T Features

* z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 1 mA VGS = ±20 VDC, VDS = 0 VD

IXTP180N055T_IXYSCorporation.pdf