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IXTQ182N055T

Power MOSFET

IXTQ182N055T Features

* Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ± 20 V,

IXTQ182N055T Datasheet (202.08 KB)

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Datasheet Details

Part number:

IXTQ182N055T

Manufacturer:

IXYS Corporation

File Size:

202.08 KB

Description:

Power mosfet.
Preliminary Technical Information TrenchMVTM Power MOSFET IXTH182N055T IXTQ182N055T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(o.

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IXTQ182N055T Power MOSFET IXYS Corporation

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