IXTQ18N60P Datasheet - IXYS

IXTQ18N60P Power MOSFET

PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTQ 18N60P IXTV 18N60P IXTV 18N60PS V = 600 V DSS ID25 = 18 A ≤ RDS(on) 420 mΩ Symbol V DSS VDGR V GS VGSM ID25 IDM IAR E AR EAS dv/dt PD T J TJM Tstg TL TSOLD Md Weight Test Conditions T J = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Tranisent TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C T C = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, T J ≤ 150°C, R G = 5 Ω TC = 25°C .

IXTQ18N60P Features

* z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density © 2006 IXYS All rights reserved DS99324E(03/06) Symbol gfs Ciss Coss Crss td(on) tr td(off) tf Qg(o

IXTQ18N60P Datasheet (165.29 KB)