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IXTQ180N10T, IXTH180N10T Datasheet - IXYS Corporation

IXTQ180N10T Power MOSFET

Preliminary Technical Information TrenchMVTM Power MOSFET IXTH180N10T IXTQ180N10T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 100 180 6.4 V A mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, .

IXTQ180N10T Features

* Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS = 0 V, ID = 2

IXTH180N10T-IXYSCorporation.pdf

This datasheet PDF includes multiple part numbers: IXTQ180N10T, IXTH180N10T. Please refer to the document for exact specifications by model.
IXTQ180N10T Datasheet Preview Page 2 IXTQ180N10T Datasheet Preview Page 3

Datasheet Details

Part number:

IXTQ180N10T, IXTH180N10T

Manufacturer:

IXYS Corporation

File Size:

195.75 KB

Description:

Power mosfet.

Note:

This datasheet PDF includes multiple part numbers: IXTQ180N10T, IXTH180N10T.
Please refer to the document for exact specifications by model.

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IXTQ180N10T IXTH180N10T Power MOSFET IXYS Corporation

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