Preliminary Technical Information TrenchMVTM Power MOSFET IXTH180N10T IXTQ180N10T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 100 180 6.4 V A mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C,
IXTH180N10T-IXYSCorporation.pdf
Datasheet Details
Part number:
IXTQ180N10T, IXTH180N10T
Manufacturer:
IXYS Corporation
File Size:
195.75 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXTQ180N10T, IXTH180N10T.
Please refer to the document for exact specifications by model.