* Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS = 0 V, ID = 2
IXTQ180N10T Datasheet (195.75 KB)
IXTQ180N10T
IXYS Corporation
195.75 KB
Power mosfet.
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTH180N10T IXTQ180N10T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on).
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