9953A (Chino-Excel Technology)
Dual P-Channel Enhancement Mode MOSFET
(9 views)
CEP05P03 (Chino-Excel Technology)
P-Channel Enhancement Mode Field Effect Transistor
CEP05P03/CEB05P03
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -18A,RDS(ON) = 70mΩ @VGS = -10V. RDS(ON) = 120mΩ @VGS = -4.5V.
Su
(8 views)
CEP703AL (Chino-Excel Technology)
N-Channel Logic Level Enhancement Mode Field Effect Transistor
CEP703AL/CEB703AL
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 40A,RDS(ON) = 17mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 4.5V.
Super
(8 views)
CEPFZ44 (Chino-Excel Technology)
N-Channel Enhancement Mode Field Effect Transistor
(8 views)
6060R (Chino-Excel Technology)
N-Channel Enhancement Mode Field Effect Transistor
(8 views)
CED61A3 (Chino-Excel Technology)
N-Channel MOSFET
CED61A3/CEU61A3
Jan. 2003
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
6
30V , 40A , RDS(ON)=13.5mΩ @VGS=10V. RDS(ON)=20m
(8 views)
CEB6030L (Chino-Excel Technology)
N-Channel Logic Level Enhancement Mode Field Effect Transistor
CEP6030L/CEB6030L
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 52A,RDS(ON) = 13.5mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V.
Supe
(7 views)
4060AL (Chino-Excel Technology)
N-Channel Enhancement Mode Field Effect Transistor
(7 views)
CEB4060 (Chino-Excel Technology)
N-Channel Enhancement Mode Field Effect Transistor
(6 views)
CEFF630 (Chino-Excel Technology)
N-Channel Enhancement Mode Field Effect Transistor
CEFF630
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
200V, 7.2A, RDS(ON) = 300mΩ @VGS = 10V. Super high dense cell design for extremel
(6 views)
CEG9926 (Chino-Excel Technology)
Dual N-Channel Enhancement Mode Field Effect Transistor
CEG9926
Nov. 2002
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V , 4.5A , RDS(ON)=30mΩ @VGS=4.5V. RDS(ON)=40m Ω @VGS=2.5V. Supe
(6 views)
CEP603AL (Chino-Excel Technology)
N-Channel Logic Level Enhancement Mode Field Effect Transistor
(6 views)
CES2302 (Chino-Excel Technology)
N-Channel MOSFET
N-Channel Enhancement Mode Field Effect Transistor FEATURES
20V, 3.0A, RDS(ON) = 72mΩ @VGS = 4.5V. RDS(ON) = 110mΩ @VGS = 2.5V. High dense cell design
(6 views)
CES2313A (Chino-Excel Technology)
P-Channel MOSFET
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-30V, -3.8A, RDS(ON) = 55mΩ @VGS = -10V. RDS(ON) = 86mΩ @VGS = -4.5V. High dense cell desi
(6 views)
CES2336 (Chino-Excel Technology)
N-Channel MOSFET
N-Channel Enhancement Mode Field Effect Transistor FEATURES
60V, 1.8A, RDS(ON) = 250mΩ @VGS = 10V. RDS(ON) = 330mΩ @VGS = 4.5V. High dense cell design
(6 views)
CED04N7G (Chino-Excel Technology)
N-Channel MOSFET
N-Channel Enhancement Mode Field Effect Transistor FEATURES
700V, 3.5A, RDS(ON) = 3.3Ω @VGS = 10V. Super high dense cell design for extremely low RDS(
(6 views)
CED12N10L (Chino-Excel Technology)
N-Channel MOSFET
N-Channel Enhancement Mode Field Effect Transistor FEATURES
100V, 11A, RDS(ON) = 175mΩ @VGS = 10V. RDS(ON) = 185mΩ @VGS = 5V. Super high dense cell de
(6 views)
CEP6060 (Chino-Excel Technology)
N-Channel Enhancement Mode Field Effect Transistor
(5 views)
0620xxx (Excel Technology International)
Numeric Displays
(5 views)
CES2310 (Chino-Excel Technology)
N-Channel MOSFET
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 4.8A, RDS(ON) = 34mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. RDS(ON) = 60mΩ @VGS = 2.
(5 views)
