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CEP6060R/CEB6060R N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 50A, RDS(ON) = 25mΩ @VGS = 10V. Super high dense cell design for e

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CED61A3/CEU61A3 Jan. 2003 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 6 30V , 40A , RDS(ON)=13.5mΩ @VGS=10V. RDS(ON)=20m

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CEP7030L/CEB7030L N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 65A,RDS(ON) = 8mΩ @VGS = 10V. RDS(ON) = 12mΩ @VGS = 4.5V. Super h

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CEM4410B Dec. 2002 N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 30V , 12.5A , RDS(ON)=9.5m Ω @VGS=10V. RDS(ON)=14m Ω @VGS=4.5V. Sup

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CEP740A/CEB740A CEF740A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP740A CEB740A CEF740A VDSS 400V 400V 400V RDS(ON) 0.55Ω

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CEP6060L/CEB6060L N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 52.4A,RDS(ON) = 21mΩ @VGS = 10V. RDS(ON) = 25mΩ @VGS = 5V. Super

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS

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CEP6030L/CEB6030L N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 52A,RDS(ON) = 13.5mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V. Supe

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CEP04N6/CEB04N6 CEF04N6 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP04N6 CEB04N6 CEF04N6 VDSS 600V 600V 600V

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CEF04N6 Feb. 2003 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 6 600V , 2.5A , RDS(ON)=2.5 Ω @VGS=10V. Super high dense ce

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CEP703AL/CEB703AL N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 40A,RDS(ON) = 17mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 4.5V. Super

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1A, RDS(ON) = 9.3Ω @VGS = 10V. High power and current handing capability. Lead free

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P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.2A, RDS(ON) = 78mΩ @VGS = -10V. RDS(ON) = 120mΩ @VGS = -4.5V. High dense cell des

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CET6426 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 4.5A, RDS(ON) = 90mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V. High dense cell

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