F4N60 Datasheet | Specifications & PDF Download

MDF4N60B N-channel MOSFET 600V MDF4N60B N-Channel MOSFET 600V, 4.6A, 2.0Ω General Description These N-channel MOSFET are produced using advanced Mag

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www.DataSheet4U.com DFF4N60 N-Channel MOSFET Features High ruggedness RDS(on) (Max 2.5 )@VGS=10V 1. Gate { { { N-Channel MOSFET 2. Drain BVDSS = 60

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MDP4N60/MDF4N60 N-channel MOSFET 600V MDP4N60/MDF4N60 N-Channel MOSFET 600V, 4.6A, 2.0Ω General Description These N-channel MOSFET are produced usin

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SVF4N60D/F/FG/T/K/M/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60D/F/FG/T/K/M/MJ is an N-channel enhancement mode power MOS field

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4N60/F4N60/I4N60/E4N60/B4N60/D4N60 4A 600V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by t

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4A, 600V, N FQP4N60C FQPF4N60C H4N60P H4N60F 4N60 H HAOHAI P: TO-220AB F: TO-220FP 50Pcs 4N60 Series N-Channel MOSFET 1000Pcs

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Silan Microelectronics SVF4N60CAF/K/D/T/MN/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION 2 SVF4N60CAF/K/D/T/MN/MJ is an N-channel enh

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FQPF4N60 April 2000 QFET FQPF4N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are prod

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improve

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SVF4N60D/F/FG/T/K/M/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60D/F/FG/T/K/M/MJ is an N-channel enhancement mode power MOS field

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IRF4N60 POWER MOSFET GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and

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SLP4N60C / SLF4N60C SLP4N60C / SLF4N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar st

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AOT4N60/AOTF4N60/AOTF4N60L 600V,4A N-Channel MOSFET General Description Product Summary The AOT4N60 & AOTF4N60 & AOTF4N60L have been fabricated usi

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CF4N60S DESCRIPTION • Electronic Ballast • Electronic Transformer • Switch Mode Power Supply 1-GATE 2-DRAIN 3-SOURCE FEATURES • Low Thermal Resi

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor AOTF4N60 ·FEATURES ·With TO-220F packaging ·High speed switching ·Very high commutation rugge

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Features � 4A,600V,RDS(on)(Max 2.5Ω)@VGS=10V � Ultra-low Gate Charge(Typical 16nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Volt

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FDPF4N60NZ — N-Channel UniFETTM II MOSFET FDPF4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.8 A, 2.5 Ω Features • RDS(on) = 1.9 Ω (Typ.) @ VGS = 10 V,

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Wisdom Semiconductor WFF4N60 N-Channel MOSFET Features ■ ■ RDS(on) (Max 2.5 Ω )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability, High

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SEMICONDUCTOR TECHNICAL DATA KF4N60F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics

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AOT4N60/AOTF4N60/AOTF4N60L 600V,4A N-Channel MOSFET General Description Product Summary The AOT4N60 & AOTF4N60 & AOTF4N60L have been fabricated usi

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