F6N60 Datasheet | Specifications & PDF Download

BRF6N60-VB BRF6N60-VB Datasheet /$IBOOFM
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%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC

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SVF6N60MJ/F/D_Datasheet 6A 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF6N60MJ/F/D is an N-channel enhancement mode power MOS field effect transistor

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SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance,

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SVF6N60MJ/F/D_Datasheet 6A 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF6N60MJ/F/D is an N-channel enhancement mode power MOS field effect transistor

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SVF6N60MJ/F/D_Datasheet 6A 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF6N60MJ/F/D is an N-channel enhancement mode power MOS field effect transistor

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FQP6N60C/FQPF6N60C QFET FQP6N60C/FQPF6N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors

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SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance,

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Main Product Characteristics: VDSS RDS(on) 600V 1.32Ω (typ.) ID 6A Features and Benefits: TO-251  Advanced MOSFET process technology  Special

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FQPF6N60 April 2000 QFET FQPF6N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are prod

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FDPF6N60ZUT — N-Channel UniFETTM II Ultra FRFETTM MOSFET FDPF6N60ZUT N-Channel UniFETTM II Ultra FRFETTM MOSFET 600 V, 4.5 A, 2 Ω November 2013 Fea

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STF6N60M2, STP6N60M2, STU6N60M2 N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh II Plus™ low Qg Power MOSFET in TO-220FP, TO-220 and IPAK packages Datashee

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BRF6N60(CS6N60F) : DC/DC N-Channel MOSFET/N MOS Purpose: These devices are well suited for high efficiency switching DC/DC converters and switc

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SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance,

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GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading p

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SVF6N60F/D/FQ_Datasheet 6A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF6N60F/D/FQ is an N-channel enhancement mode power MOS field effect transistor

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GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading p

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Main Product Characteristics VDSS 600V RDS(on) 1.32Ω (typ.) ID 6A Features and Benefits TO-251  Advanced MOSFET process technology  Special de

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BRF6N60 Rev.D Nov.-2015 DATA SHEET / Descriptions TO-220F N MOS 。N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features DS 、、、、 dv/dt 。 Low

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MDF6N60B N-channel MOSFET 600V MDF6N60B N-Channel MOSFET 600V, 6A, 1.45Ω General Description The MDF6N60B uses advanced MagnaChip’s MOSFET Technolog

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SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance,

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