FDN Datasheet | Specifications & PDF Download

FDN302P October 2000 FDN302P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged gat

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DATA SHEET www.onsemi.com MOSFET – Single, P-Channel, POWERTRENCH) FDN352AP VDSS −30 V RDS(ON) MAX 180 mW @ −10 V 300 mW @ −4.5 V ID MAX −1.3 A −1

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MOSFET – N-Channel, POWERTRENCH) 20 V, 6.1 A, 28 mW FDN028N20 General Description This N−Channel POWERTRENCH MOSFET is produced using onsemi’s advanc

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FDN342P August 1999 FDN342P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This P-Channel 2.5V specified MOSFET is produced in a

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March 1998 FDN358P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description SuperSOTTM-3 P-Channel logic level enhancement

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FDN361BN 30V N-Channel, Logic Level, PowerTrench“ MOSFET Fe bruary 2009 FDN361BN 30V N-Channel, Logic Level, PowerTrench“ MOSFET General Descriptio

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DATA SHEET www.onsemi.com MOSFET – Single, N-Channel, POWERTRENCH) 30 V, 6.5 A, 23 mW VDS 30 V RDS(ON) MAX 23 mW @ 10 V 36 mW @ 4.5 V ID MAX 6.5 A

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MOSFET – P-Channel, 1.8 V Specified, POWERTRENCH) FDN306P General Description This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced low voltag

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C1602A-YFDN-DYNC SPECIFICATION FOR APPROVAL Product Type: Character Type STN Dot Matrix LCD Module Part No.: C1602A-YFDN-DYNC Customer: Customer Pa

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FDN304P January 2001 FDN304P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s

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FDN360P February 1999 FDN360P Single P-Channel PowerTrenchTM MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fairchil

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FDN361AN April 1999 FDN361AN N-Channel, Logic Level, PowerTrenchΤΜ General Description This N-Channel Logic Level MOSFET is produced using Fairchild

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FDN352AP Single P-Channel, PowerTrench® MOSFET August 2005 FDN352AP Single P-Channel, PowerTrench® MOSFET Features ■ –1.3 A, –30V –1.1 A, –30V RDS(O

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SMD Type Product specification FDN8601 100 V, 2.7 A, 109 m: Features „ Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A „ Max rDS(on) = 175 m: at VGS

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FDN304PZ March 2003 FDN304PZ P-Channel 1.8V Specified PowerTrench® MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s

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MOSFET – N-Channel, Logic Level, POWERTRENCH) 60 V, 1.6 A, 98 mW FDN5632N-F085 Features • RDS(on) = 98 mW at VGS = 4.5 V, ID = 1.6 A • RDS(on) = 82 m

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SMD Type P-Channel MOSFET FDN304P (KDN304P) MOSFET ■ Features ● VDS (V) =-20V ● ID =-2.4A (VGS =-4.5V) ● RDS(ON) ＜ 52mΩ (VGS =-4.5V) ● RDS(ON) ＜ 70

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DATA SHEET www.onsemi.com MOSFET – Single, P-Channel, POWERTRENCH) FDN360P General Description This P−Channel Logic Level MOSFET is produced using on

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MOSFET – P-Channel, Logic Level, POWERTRENCH) 60 V FDN5618P General Description This 60 V P−Channel MOSFET uses onsemi’s high voltage POWERTRENCH pro

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MOSFET – N-Channel, POWERTRENCH), Logic Level FDN359BN General Description This N−Channel Logic Level MOSFET is produced using onsemi’s advanced POW

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