FDN Datasheet | Specifications & PDF Download

FDN302P October 2000 FDN302P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged gat

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FDN361BN 30V N-Channel, Logic Level, PowerTrench“ MOSFET Fe bruary 2009 FDN361BN 30V N-Channel, Logic Level, PowerTrench“ MOSFET General Descriptio

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SMD Type Product specification FDN8601 100 V, 2.7 A, 109 m: Features „ Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A „ Max rDS(on) = 175 m: at VGS

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FDN335N April 1999 FDN335N N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This N-Channel 2.5V specified MOSFET is produced using

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March 1998 FDN358P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description SuperSOTTM-3 P-Channel logic level enhancement

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MOSFET – N-Channel, Logic Level, POWERTRENCH) 60 V, 1.6 A, 98 mW FDN5632N-F085 Features • RDS(on) = 98 mW at VGS = 4.5 V, ID = 1.6 A • RDS(on) = 82 m

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Transistor - N-Channel, Logic Level, Enhancement Mode Field Effect FDN337N General Description SUPERSOTt−3 N−Channel logic level enhancement mode po

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MOSFET – N-Channel, POWERTRENCH), Logic Level FDN359BN General Description This N−Channel Logic Level MOSFET is produced using onsemi’s advanced POW

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FDN86265P P-Channel PowerTrench® MOSFET May 2014 FDN86265P P-Channel PowerTrench® MOSFET -150 V, -0.8 A, 1.2 Ω Features General Description „ Max

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FDN304P January 2001 FDN304P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s

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FDN342P August 1999 FDN342P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This P-Channel 2.5V specified MOSFET is produced in a

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FDN360P February 1999 FDN360P Single P-Channel PowerTrenchTM MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fairchil

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FDN361AN April 1999 FDN361AN N-Channel, Logic Level, PowerTrenchΤΜ General Description This N-Channel Logic Level MOSFET is produced using Fairchild

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FDN371N September 2001 FDN371N 20V N-Channel PowerTrench® MOSFET General Description This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTr

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FDN5630 March 2000 FDN5630 60V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the

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FDN352AP Single P-Channel, PowerTrench® MOSFET August 2005 FDN352AP Single P-Channel, PowerTrench® MOSFET Features ■ –1.3 A, –30V –1.1 A, –30V RDS(O

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MOSFET – N-Channel, POWERTRENCH) 60 V FDN5630 General Description This N−Channel MOSFET has been designed specifically to improve the overall efficien

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DATA SHEET www.onsemi.com MOSFET – Single, P-Channel, POWERTRENCH) FDN360P General Description This P−Channel Logic Level MOSFET is produced using on

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DATA SHEET www.onsemi.com MOSFET – Single, P-Channel, POWERTRENCH) FDN352AP VDSS −30 V RDS(ON) MAX 180 mW @ −10 V 300 mW @ −4.5 V ID MAX −1.3 A −1

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MOSFET – N-Channel, POWERTRENCH), 1.8 Vgs Specified 20 V, 2 A, 70 mW FDN327N General Description This 20 V N−Channel MOSFET uses onsemi’s high voltag

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