FDN Datasheet | Pinout, Features, Price Comparison & PDF

MOSFET – P-Channel, POWERTRENCH®, Specified 2.5 V FDN342P General Description This P−Channel 2.5 V specified MOSFET is produced in a rugged gate versi

FDN306P December 2001 FDN306P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s

DATA SHEET www.onsemi.com MOSFET – Single, P-Channel, POWERTRENCH) FDN352AP VDSS −30 V RDS(ON) MAX 180 mW @ −10 V 300 mW @ −4.5 V ID MAX −1.3 A −1

April 1999 FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semi

DATA SHEET www.onsemi.com MOSFET – Single, P-Channel, POWERTRENCH), Logic Level FDN340P SOT−23 CASE 527AG General Description This P−Channel Logic

MOSFET – N-Channel POWERTRENCH) 2.5 V Specified FDN339AN Description This N−Channel 2.5 V specified MOSFET is produced using onsemi’s advanced Power

MOSFET – N-Channel, Logic Level, Enhancement Mode FDN357N General Description SUPERSOTt−3 N−Channel logic level enhancement mode power field effect

MOSFET – N-Channel, POWERTRENCH), Logic Level FDN359BN General Description This N−Channel Logic Level MOSFET is produced using onsemi’s advanced POW

MOSFET – N-Channel, 2.5 V Specified, POWERTRENCH) 20 V, 1.7 A, 100 mW FDN335N General Description This N−Channel 2.5 V specified MOSFET is produced u

MOSFET – P-Channel, 1.8 V Specified, POWERTRENCH) FDN304PZ General Description This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced low volta

FDN327N October 2001 FDN327N N-Channel 1.8 Vgs Specified PowerTrench® MOSFET General Description This 20V N-Channel MOSFET uses Fairchild’s high vol

March 1998 FDN358P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description SuperSOTTM-3 P-Channel logic level enhancement

MOSFET – N-Channel, POWERTRENCH), 1.8 Vgs Specified 20 V, 2 A, 70 mW FDN327N General Description This 20 V N−Channel MOSFET uses onsemi’s high voltag

UMW FDN352AP -30V P-ChanneI MOSFET 1.Description These devices are well suited for low voltage and battery pow-ered applications where low in-line po

MOSFET – P-Channel, 2.5 V Specified, POWERTRENCH) FDN338P General Description This P−Channel 2.5 V specified MOSFET uses onsemi’s advanced low voltag

MOSFET – Single P-Channel POWERTRENCH) 2.5 V Specified FDN336P Description This P−Channel 2.5 V specified MOSFET is produced using onsemi’s advanced

C1602A-YFDN-DYNC SPECIFICATION FOR APPROVAL Product Type: Character Type STN Dot Matrix LCD Module Part No.: C1602A-YFDN-DYNC Customer: Customer Pa

FDN338P FDN338P P-Channel 2.5V Specified PowerTrench® MOSFET November 2013 General Description This P-Channel 2.5V specified MOSFET uses Fairchild’

MOSFET – P-Channel, 2.5 V Specified, POWERTRENCH) FDN308P General Description This P−Channel 2.5 V specified MOSFET uses a rugged gate version of ons

November 1998 FDN336P Single P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using