FDN Datasheet | Specifications & PDF Download

MOSFET – P-Channel, 1.8 V Specified, POWERTRENCH) FDN306P General Description This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced low voltag

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MOSFET – N-Channel, POWERTRENCH), Logic Level FDN359BN General Description This N−Channel Logic Level MOSFET is produced using onsemi’s advanced POW

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March 1998 FDN358P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description SuperSOTTM-3 P-Channel logic level enhancement

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MOSFET – P-Channel 1.8 V Specified POWERTRENCH) FDN304P General Description This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced low voltage P

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MOSFET – N-Channel, POWERTRENCH), Logic Level FDN359AN General Description This N−Channel Logic Level MOSFET is produced using onsemi’s advanced POW

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MOSFET – P-Channel, 2.5 V Specified, POWERTRENCH) FDN308P General Description This P−Channel 2.5 V specified MOSFET uses a rugged gate version of ons

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DATA SHEET www.onsemi.com MOSFET – Single, P-Channel, POWERTRENCH), Logic Level FDN340P SOT−23 CASE 527AG General Description This P−Channel Logic

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FDN306P December 2001 FDN306P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s

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FDN342P August 1999 FDN342P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This P-Channel 2.5V specified MOSFET is produced in a

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FDN86246 N-Channel PowerTrench® MOSFET December 2010 FDN86246 N-Channel PowerTrench® MOSFET 150 V, 1.6 A, 261 m: Features General Description „ M

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MOSFET – N-Channel, POWERTRENCH) 150 V, 1.6 A, 261 mW FDN86246 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRE

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DATA SHEET www.onsemi.com MOSFET – Single, N-Channel, POWERTRENCH) 30 V, 6.5 A, 23 mW VDS 30 V RDS(ON) MAX 23 mW @ 10 V 36 mW @ 4.5 V ID MAX 6.5 A

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MOSFET – P-Channel, POWERTRENCH®, Specified 2.5 V FDN342P General Description This P−Channel 2.5 V specified MOSFET is produced in a rugged gate versi

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MOSFET – P-Channel, 2.5 V Specified, POWERTRENCH) FDN302P General Description This P−Channel 2.5 V specified MOSFET uses a rugged gate version of ons

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FDN302P October 2000 FDN302P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged gat

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FDN5618P July 2000 PRELIMINARY FDN5618P 60V P-Channel Logic Level PowerTrench MOSFET General Description This 60V P-Channel MOSFET uses Fairchild’s

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FDN8601 N-Channel PowerTrench® MOSFET FDN8601 N-Channel PowerTrench® MOSFET 100 V, 2.7 A, 109 m: July 2010 Features General Description „ Max rDS

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SMD Type Product specification FDN8601 100 V, 2.7 A, 109 m: Features „ Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A „ Max rDS(on) = 175 m: at VGS

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FDN372S September 2002 FDN372S 30V N-Channel PowerTrench SyncFET™ General Description The FDN372S is designed to replace a single MOSFET and Schott

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