Model FP23 User Guide Microphone Preamplifier Gene.
IRFP23N50L - Power MOSFET
IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = .HT32FP2350 - 32-Bit Arm Cortex-M0 USB Type-C PD MCU
HT32FP2350/HT32FP2450 Datasheet 32-Bit Arm® Cortex®-M0 USB Type-C PD MCU Revision: V1.00 Date: �F�e�br��u�a�r�y��23�,���2�0�1�8 Table of Contents 32.AFP2337S - 100V P-Channel Enhancement Mode MOSFET
Alfa-MOS Technology General Description AFP2337S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.AFP2325S - P-Channel Enhancement Mode MOSFET
Alfa-MOS Technology General Description AFP2325S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.AFP2337A - 100V P-Channel Enhancement Mode MOSFET
Alfa-MOS Technology General Description AFP2337A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.SSFP23N25 - Power MOSFET
SSFP23N25 StarMOST Power MOSFET ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ .IRFP23N50L - N-Channel MOSFET
iscN-Channel MOSFET Transistor IRFP23N50L ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.235Ω (MAX) ·Enhancement mode: Vth = 3.0 to 5.0V (VDS.SSFP23N40 - Power MOSFET
SSFP23N40 StarMOST Power MOSFET ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ .AFP2311A - 20V P-Channel Enhancement Mode MOSFET
Alfa-MOS Technology General Description AFP2311A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.BFP23 - PNP Silicon Transistors
PNP Silicon Transistors with High Reverse Voltage High breakdown voltage q Low collector-emitter saturation voltage q Low capacitance q Complementary .AFP2379 - P-Channel Enhancement Mode MOSFET
Alfa-MOS Technology General Description AFP2379, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low .AFP2341 - P-Channel Enhancement Mode MOSFET
Alfa-MOS Technology General Description AFP2341, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low .AFP2317 - P-Channel Enhancement Mode MOSFET
Alfa-MOS Technology General Description AFP2317, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low .AFP2379AS - P-Channel MOSFET
Alfa-MOS Technology General Description AFP2379AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo.AFP2367AS - P-Channel MOSFET
Alfa-MOS Technology General Description AFP2367AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo.AFP2363AS - P-Channel MOSFET
Alfa-MOS Technology General Description AFP2363AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo.AFP2345A - P-Channel MOSFET
Alfa-MOS Technology General Description AFP2345A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.AFP2343A - P-Channel MOSFET
Alfa-MOS Technology General Description AFP2343A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.AFP2333A - P-Channel MOSFET
Alfa-MOS Technology General Description AFP2333A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.AFP2325A - P-Channel MOSFET
Alfa-MOS Technology General Description AFP2325A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.