FP23 Datasheet | Specifications & PDF Download

IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS =

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Model FP23 User Guide Microphone Preamplifier General Description The Shure FP23 is a portable, battery-powered microphone preamplifier with phantom p

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IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 1

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isc N-Channel MOSFET Transistor IXFP230N075T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 4.2mΩ@VGS=10V ·Fully characterized avalanche v

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iscN-Channel MOSFET Transistor IRFP23N50L ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.235Ω (MAX) ·Enhancement mode: Vth = 3.0 to 5.0V (VDS

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TrenchT2TM HiperFETTM Power MOSFET IXFA230N075T2 IXFP230N075T2 VDSS ID25 RDS(on) = 75V = 230A ≤ 4.2mΩ N-Channel Enhancement Mode Avalanche Rated

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Alfa-MOS Technology General Description AFP2367AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo

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Alfa-MOS Technology General Description AFP2311A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low

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Alfa-MOS Technology General Description AFP2325A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low

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Alfa-MOS Technology General Description AFP2301AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo

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SSFP23N40 StarMOST Power MOSFET ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■

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AFP2303AS23RG AFP2303AS23RG-VB Datasheet www.VBsemi.com P-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Typ. 0.046 at VGS = - 1

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HT32FP2350/HT32FP2450 Datasheet 32-Bit Arm® Cortex®-M0 USB Type-C PD MCU Revision: V1.00 Date: �F�e�br��u�a�r�y��23�,���2�0�1�8 Table of Contents 32

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PNP Silicon Transistors with High Reverse Voltage High breakdown voltage q Low collector-emitter saturation voltage q Low capacitance q Complementary

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Alfa-MOS Technology General Description AFP2379, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low

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Alfa-MOS Technology General Description AFP2341, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low

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Alfa-MOS Technology General Description AFP2337S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low

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Alfa-MOS Technology General Description AFP2325S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low

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Alfa-MOS Technology General Description AFP2317, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low

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Alfa-MOS Technology General Description AFP2379AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo

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