FP23 Datasheet | Specifications & PDF Download

AFP2303AS23RG AFP2303AS23RG-VB Datasheet www.VBsemi.com P-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Typ. 0.046 at VGS = - 1

(39 views)

IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS =

(38 views)

AFP2319AS23RG-VB AFP2319AS23RG-VB Datasheet P-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Typ. 0.046 at VGS = - 10 V - 30 0.04

(37 views)

Model FP23 User Guide Microphone Preamplifier General Description The Shure FP23 is a portable, battery-powered microphone preamplifier with phantom p

(36 views)

Alfa-MOS Technology General Description AFP2303A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low

(35 views)

Alfa-MOS Technology General Description AFP2301AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo

(35 views)

Alfa-MOS Technology General Description AFP2311, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low

(31 views)

Alfa-MOS Technology General Description AFP2311A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low

(29 views)

Alfa-MOS Technology General Description AFP2309A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low

(28 views)

iscN-Channel MOSFET Transistor IRFP23N50L ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.235Ω (MAX) ·Enhancement mode: Vth = 3.0 to 5.0V (VDS

(27 views)

IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 1

(26 views)

Alfa-MOS Technology General Description AFP2325S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low

(25 views)

Alfa-MOS Technology General Description AFP2319A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low

(25 views)

Alfa-MOS Technology General Description AFP2307A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low

(25 views)

Alfa-MOS Technology General Description AFP2379AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo

(24 views)

Alfa-MOS Technology General Description AFP2325A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low

(24 views)

PNP Silicon Transistors with High Reverse Voltage High breakdown voltage q Low collector-emitter saturation voltage q Low capacitance q Complementary

(23 views)

isc N-Channel MOSFET Transistor IXFP230N075T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 4.2mΩ@VGS=10V ·Fully characterized avalanche v

(23 views)

Alfa-MOS Technology General Description AFP2333A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low

(22 views)

TrenchT2TM HiperFETTM Power MOSFET IXFA230N075T2 IXFP230N075T2 VDSS ID25 RDS(on) = 75V = 230A ≤ 4.2mΩ N-Channel Enhancement Mode Avalanche Rated

(21 views)