AFP2325S, AFP2325S-Alfa Datasheet - Alfa-MOS

AFP2325S P-Channel Enhancement Mode MOSFET

AFP2325S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFP2325S Features

* -150V/-1.4A,RDS(ON)=745 mΩ@VGS=-10V -150V/-1.0A,RDS(ON)=800 mΩ@VGS=-6V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design Application Active Clamp Circuits in DC/DC Power Supplies Pin Define Pin 1 2 3 Symb

AFP2325S-Alfa-MOS.pdf