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AFP2337S, AFP2337S-Alfa - 100V P-Channel Enhancement Mode MOSFET

Alfa-MOS

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AFP2337S Datasheet Preview — This datasheet PDF includes multiple part numbers: AFP2337S, AFP2337S-Alfa. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	AFP2337S, AFP2337S-Alfa
Manufacturer	Alfa-MOS
File Size	531.67 KB
Description	100V P-Channel Enhancement Mode MOSFET
Datasheet	AFP2337S-Alfa-MOS.pdf
Note	This datasheet PDF includes multiple part numbers: AFP2337S, AFP2337S-Alfa. Please refer to the document for exact specifications by model.

AFP2337S Product details

Description

AFP2337S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

-100V/-3.8A,RDS(ON)= 200mΩ@VGS= -10V.
-100V/-2.6A,RDS(ON)= 220mΩ@VGS= -4.5V.
Super high density cell design for extremely low RDS (ON).
SOT-23-3L package design.

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Published: Dec 11, 2018 |