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AFP2337A, AFP2337A-Alfa 100V P-Channel Enhancement Mode MOSFET

AFP2337A Description

Alfa-MOS Technology General .
AFP2337A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

AFP2337A Features

* ID=-3.8A,RDS(ON)= 295mΩ@VGS= -10V
* ID=-2.6A,RDS(ON)= 325mΩ@VGS= -4.5V
* Super high density cell design for extremely low RDS (ON)

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: AFP2337A, AFP2337A-Alfa. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
AFP2337A, AFP2337A-Alfa
Manufacturer
Alfa-MOS
File Size
656.09 KB
Datasheet
AFP2337A-Alfa-MOS.pdf
Description
100V P-Channel Enhancement Mode MOSFET
Note
This datasheet PDF includes multiple part numbers: AFP2337A, AFP2337A-Alfa.
Please refer to the document for exact specifications by model.

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100V P-Channel Enhancement Mode MOSFET Alfa-MOS
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