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AFP2337A

100V P-Channel Enhancement Mode MOSFET

AFP2337A Features

* ID=-3.8A,RDS(ON)= 295mΩ@VGS= -10V

* ID=-2.6A,RDS(ON)= 325mΩ@VGS= -4.5V

* Super high density cell design for extremely low RDS (ON)

* SOT-23 package design Application

* Active Clamp Circuits in DC/DC Power Supplies Pin Define Pin 1 2 3 Symbol G S D Description Gate Source D

AFP2337A General Description

AFP2337A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFP2337A Datasheet (656.09 KB)

Preview of AFP2337A PDF

Datasheet Details

Part number:

AFP2337A

Manufacturer:

Alfa-MOS

File Size:

656.09 KB

Description:

100v p-channel enhancement mode mosfet.

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TAGS

AFP2337A 100V P-Channel Enhancement Mode MOSFET Alfa-MOS

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