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AFP2337A, AFP2337A-Alfa - 100V P-Channel Enhancement Mode MOSFET

Alfa-MOS

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AFP2337A Datasheet Preview — This datasheet PDF includes multiple part numbers: AFP2337A, AFP2337A-Alfa. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	AFP2337A, AFP2337A-Alfa
Manufacturer	Alfa-MOS
File Size	656.09 KB
Description	100V P-Channel Enhancement Mode MOSFET
Datasheet	AFP2337A-Alfa-MOS.pdf
Note	This datasheet PDF includes multiple part numbers: AFP2337A, AFP2337A-Alfa. Please refer to the document for exact specifications by model.

AFP2337A Product details

Description

AFP2337A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

ID=-3.8A,RDS(ON)= 295mΩ@VGS= -10V.
ID=-2.6A,RDS(ON)= 325mΩ@VGS= -4.5V.
Super high density cell design for extremely low RDS (ON).
SOT-23 package design.

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Published: Nov 29, 2018 |