Fec Datasheet | Specifications & PDF Download

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 8.5mΩ ID -25A P-Channel MOSFET UIS, R

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www.irantk.ir XY6112 Cost-effective off-line switching power supply controller - Shanghai Vision Institute of Electronic Technology Co., Ltd. Page 1 o

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Gr Pr STU/D601S Sa mHop Microelectronics C orp. P-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.2 PRODUCT SUMMARY VDSS ID R

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SS41F Low Gauss Bipolar Hall-effect Sensor DESCRIPTION The SS41F is a sensitive, bipolar Hall-effect sensor. This magnetic sensor offers reverse powe

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3046, 3056, AND 3058 The A3046EU/LU, A3056EU/LU, and A3058EU/LU Hall effect gear-tooth sensors are monolithic integrated circuits that switch in respo

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2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2717 DC−DC Converter and Motor Drive Applications Unit: mm l Low d

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ATC Complementary Output Hall Effect Latch „ Features - On-chip Hall sensor with two different sensitivity and hysteresis settings for ATS276/277 - 3.

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  N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  25V  D RDSON (MAX.)  6mΩ  ID  80A  G   UIS, Rg 100%

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FT8400 、、  85Vac~265Vac  5V、9V12VSEL  SEL，Vout=5V  SEL=160Kohm，Vout=9V  SEL，Vout=12V  BUCK  ：< 0.05S  ：<50mW@264Vac, 5V  ：±3%  ，EMI

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4.0mΩ ID 75A N Channel MOSFET UIS,

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NANJING AH ELECTRONICS CO., LTD AH496B，AH3503 SERIES LINEAR HALL-EFFECT SENSORS These Hall-effect sensors accurately track extremely small changes in

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    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  100V  D RDSON (MAX.)  150mΩ  ID  10A  G   UIS, Rg

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ACS704ELC-005 Fully Integrated, Hall Effect-Based Linear Current Sensor with Voltage Isolation and a Low-Resistance Current Conductor Not for New Des

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SEMICONDUCTOR TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES High Speed. Small Package. Enhancement-Mode.

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YJB150N06BQ RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● 100% UIS Tested ●

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Hall-effect Position Sensors with Sealed Housing 103SR Series Datasheet Hall-effect Position Sensors with Sealed Housing The 103SR Series Hall-effect

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Shantou Huashan Electronic Devices Co.,Ltd. HFP13N50 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel e

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