Field-Stop Datasheet | Specifications & PDF Download

SGT40N60NPFDPN_Datasheet 40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for indu

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Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog

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SGA45T60SMD 45A 600V Field Stop Trench IGBT SGA45T60SMD 45A 600V Field Stop Trench IGBT Features • Field Stop Trench Technology • Typical VCE(sat) =

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MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation General Description Th

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Features • 600V Fast Field Stop Trench Technology • Low Switching Loss for a Wide Temperature Range • Positive Temperature Coefficient • Easy Parallel

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Silan Microelectronics SGT15T60SD1T/F/S_Datasheet 15A, 600V FIELD STOP IGBT DESCRIPTION C 2 The SGT15T60SD1T/F/S field stop III IGBT features lo

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TGPF30N43P Features: • 430V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operati

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STGWA50IH65DF Trench gate field-stop IGBT, 650 V, 50 A soft switching IH series in a TO-247 long leads package Datasheet - production data Features

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General Description Din-Tek Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed fo

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TGD30N40P Features: • 400V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operatio

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www.DataSheet.co.kr FGH60N60SFD 600V, 60A Field Stop IGBT August 2008 FGH60N60SFD 600V, 60A Field Stop IGBT Features • High current capability • Lo

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STGB4M65DF2 Trench gate field-stop IGBT, M series 650 V, 4 A low loss Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Internal schematic diag

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Silan Microelectronics SGT70N65FDM1P7_Datasheet 70A, 650V FIELD STOP IGBT DESCRIPTION SGT70N65FD1M1P7 adopts Field Stop IGBT technology, offer the o

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RGTV00TS65 650V 50A Field Stop Trench IGBT Datasheet VCES IC(100°C) VCE(sat) (Typ.) PD 650V 50A 1.5V 276W Features 1) Low Collector - Emitter Sat

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Features • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation

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FGH40N60UFD — 600 V, 40 A Field Stop IGBT November 2013 FGH40N60UFD 600 V, 40 A Field Stop IGBT Features • High Current Capability • Low Saturation

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SGT40N60NPFDPN_Datasheet 40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for indu

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STGB10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D²PAK package Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Inter

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Silan Microelectronics SGTP5T60SD1D(F)(S)_Datasheet 5A, 600V FIELD STOP IGBT DESCRIPTION The SGTP5T60SD1D/F/S field stop IGBT features low conducti

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FGI40N60SF 600V, 40A Field Stop IGBT FGI40N60SF 600V, 40A Field Stop IGBT Features • High current capability • Low saturation voltage: VCE(sat) =2.3V

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