G2G Datasheet | Specifications & PDF Download

SAMSUNG CONFIDENTIAL Rev. 1.0 Dec. 2012 KLMxGxGEAC-B001 Samsung e·MMC Product family e.MMC 4.5 Specification compatibility datasheet SAMSUNG ELECTRONI

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Rev. 1.1, Dec 2011 KLMxGxGE4A-A001 Samsung e·MMC Product family e.MMC 4.41 Specification compatibility datasheet SAMSUNG ELECTRONICS RESERVES THE R

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SAMSUNG CONFIDENTIAL Rev. 0.6, Jul. 2014 KLMxGxGEND-B031 Preliminary Samsung e·MMC Product family e.MMC 5.0 Specification compatibility datasheet SAMS

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FMG2G300US60 FMG2G300US60 Molding Type Module IGBT General Description Fairchild IGBT Power Module provides low conduction and switching losses as

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www.DataSheet.co.kr W9864G2GH 512K X 4 BANKS X 32BITS SDRAM Table of Contents1. 2. 3. 4. 5. 6. 7. GENERAL DESCRIPTION

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K524G2GACB-A050 MCP MEMORY MCP Specification 4Gb NAND Flash + 2Gb Mobile DDR INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUC

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ALUMINUM ELECTROLYTIC CAPACITORS GG Snap-in Terminal Type, 105°C Ultra-Smaller-Sized series One rank smaller case sized than GN series. Suited for eq

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PRELIMINARYNSootimcee: pTahriasmisentroict alimfinitsalasrpeescuifbicjeactitotno. change. MITSUBISHI MICROCOMPUTERS 7544 Group SINGLE-CHIP 8-BIT CMOS

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w w U 4 t e e h SPECIFICATION FOR LCD MODULE S a t a D . w Model No. TM12864NCCG m o .c Prepared by: Checked by : Verified by : Approved by: w w

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ALUMINUM ELECTROLYTIC CAPACITORS LG Snap-in Terminal Type, 85°C Smaller-Sized series One rank smaller case sized than LN series. Suited for equipment

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ALUMINUM ELECTROLYTIC CAPACITORS LG Snap-in Terminal Type, 85°C Smaller-Sized series One rank smaller case sized than LN series. Suited for equipment

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G2A THRU G2M GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes * DO-204AP TED TEN PA 0.034 (0.

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FMG2G300US60E IGBT FMG2G300US60E Molding Type Module General Description Fairchild IGBT Power Module provides low conduction and switching losses as

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FMG2G50US60 September 2001 IGBT FMG2G50US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modul

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VISHAY Standard Sinterglass Diode G2A / B / D / G / J / K / M Vishay Semiconductors Features • High temperature metallurgically bonded constructed r

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* $) * 0) 9ROWDJH5DQJH WR9 )RUZDUG&XUUHQW $PSHUH 685)$&(02817*(1(5$/385326(6,/,&215(&7,),(56 )($785(6 ƒ )R

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OneNAND2G(KFG2G16Q2M-DEBx) OneNAND4G(KFH4G16Q2M-DEBx) OneNAND8G(KFW8G16Q2M-DEBx) FLASH MEMORY www.DataSheet4U.com KFG2G16Q2M KFH4G16Q2M KFW8G16Q2M

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ALUMINUM ELECTROLYTIC CAPACITORS GG Snap-in Terminal Type, 105°C Ultra-Smaller-Sized series One rank smaller case sized than GN series. Suited for eq

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ALUMINUM ELECTROLYTIC CAPACITORS LG Snap-in Terminal Type, 85°C Smaller-Sized series One rank smaller case sized than LN series. Suited for equipment

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