www.DataSheet4U.com OMRON RELAYS DERF ELECTRONIC.
Derf
G2L-113P-V-US-24VDC - Power Relay
www.DataSheet4U.com OMRON RELAYS DERF ELECTRONICS CORPORATION DERF ELECTRONICS CORP. 1 Biehn Street, New Rochelle, NY 10801 Phone (914) 235-4600 • .
Omron
G2L-1V - PCB Relay
w w w .d e e h s a t a . u t4 m o c www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .
Honeywell
19C003PG2L - Pressure Sensors
www.DataSheet4U.com Pressure Sensors Low-Cost, Stainless Steel, Isolated Sensors 19 mm Series FEATURES • Low cost • Rugged, isolated stainless steel.
Honeywell
19C005PG2L - Pressure Sensors
www.DataSheet4U.com Pressure Sensors Low-Cost, Stainless Steel, Isolated Sensors 19 mm Series FEATURES • Low cost • Rugged, isolated stainless steel.
Renesas
SLG7RN45315 - RZ/G2l SMARC USB / Ethernet Logic
SLG7RN45315 GreenPAK ™ RZ/G2l SMARC USB / Ethernet Logic General Description Renesas SLG7RN45315 is a low power and small form device. The SoC is hou.
Derf
G2L-113P-US-xxVDC - Power Relay
www.DataSheet4U.com OMRON RELAYS DERF ELECTRONICS CORPORATION DERF ELECTRONICS CORP. 1 Biehn Street, New Rochelle, NY 10801 Phone (914) 235-4600 • .
ESMT
F59D1G81MA-45TG2L - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
ESMT Flash FEATURES z Voltage Supply: 1.8V (1.7 V ~ 1.95V) z Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.
ESMT
F59D1G81MA-45BG2L - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
ESMT Flash FEATURES z Voltage Supply: 1.8V (1.7 V ~ 1.95V) z Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.
ESMT
F59D1G81MA-45BCG2L - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
ESMT Flash FEATURES z Voltage Supply: 1.8V (1.7 V ~ 1.95V) z Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.
ESMT
F59D1G161MA-45TG2L - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
ESMT Flash FEATURES z Voltage Supply: 1.8V (1.7 V ~ 1.95V) z Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.
ESMT
F59D1G161MA-45BG2L - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
ESMT Flash FEATURES z Voltage Supply: 1.8V (1.7 V ~ 1.95V) z Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.
ESMT
F59D4G81CA-45BG2L - 4 Gbit (512M x 8) 1.8V NAND Flash Memory
ESMT Flash FEATURES Organization – Memory cell array 4352 × 128K × 8 – Register 4352 × 8 – Page size 4352 bytes – Block size (256K + 16K) bytes Mo.
ESMT
F59L4G81CA-25TG2L - 4 Gbit (512M x 8) 3.3V NAND Flash Memory
ESMT Flash FEATURES Organization – Memory cell array 4352 × 128K × 8 – Register 4352 × 8 – Page size 4352 bytes – Block size (256K + 16K) bytes Mo.
ESMT
F59L4G81CA-25BG2L - 4 Gbit (512M x 8) 3.3V NAND Flash Memory
ESMT Flash FEATURES Organization – Memory cell array 4352 × 128K × 8 – Register 4352 × 8 – Page size 4352 bytes – Block size (256K + 16K) bytes Mo.
ESMT
M15F2G16128A-EFBG2L - DDR3 SDRAM
ESMT DR3 SDRAM Feature Interface and Power Supply ˗ SSTL_15: VDD/VDDQ = 1.5V(±0.075V) JEDEC DDR3 Compliant ˗ 8n Prefetch Architecture ˗ Differenti.
ESMT
M15F2G16128A-DEBG2L - DDR3 SDRAM
ESMT DR3 SDRAM Feature Interface and Power Supply ˗ SSTL_15: VDD/VDDQ = 1.5V(±0.075V) JEDEC DDR3 Compliant ˗ 8n Prefetch Architecture ˗ Differenti.
ESMT
M15F2G16128A-EFBG2LS - DDR3 SDRAM
ESMT DR3 SDRAM Feature Interface and Power Supply ˗ SSTL_15: VDD/VDDQ = 1.5V(±0.075V) JEDEC DDR3 Compliant ˗ 8n Prefetch Architecture ˗ Differenti.
ESMT
M15F2G16128A-DEBG2LS - DDR3 SDRAM
ESMT DR3 SDRAM Feature Interface and Power Supply ˗ SSTL_15: VDD/VDDQ = 1.5V(±0.075V) JEDEC DDR3 Compliant ˗ 8n Prefetch Architecture ˗ Differenti.
ESMT
M15F2G16128A-EFBG2L - 16M x 16 Bit x 8 Banks DDR3 SDRAM
ESMT DR3 SDRAM Feature Interface and Power Supply ˗ SSTL_15: VDD/VDDQ = 1.5V(±0.075V) JEDEC DDR3 Compliant ˗ 8n Prefetch Architecture ˗ Differenti.
ESMT
M15F2G16128A-DEBG2L - 16M x 16 Bit x 8 Banks DDR3 SDRAM
ESMT DR3 SDRAM Feature Interface and Power Supply ˗ SSTL_15: VDD/VDDQ = 1.5V(±0.075V) JEDEC DDR3 Compliant ˗ 8n Prefetch Architecture ˗ Differenti.
