GH2 Datasheet | Specifications & PDF Download

www.DataSheet4U.com VCES Low VCE(sat) High speed IGBT IXGH 25 N120 IXGH 25 N120A 1200 V 1200 V IC25 50 A 50 A VCE(sat) 3V 4V Symbol VCES VCGR VGES

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IGBT IXGH 20N100 IXGT 20N100 VCES IC25 VCE(sat) tfi(typ) = 1000 V = 40 A = 3.0 V = 280 ns Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 IC

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ＴＨＹＲＩＳＴＯＲ ■ CIRCUIT 200Ａ Ａvg 1600 Ｖolts ■ OUTLINE DRAWING PGH200N16 Dimension:［mm］ ・ Part of Diode Bridge & Thyristor ■ Maximum Ratings Parameter

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THYRISTOR MODULE 200A / 800V FEATURES * Isolated Base * 3 Phase Converter with Rush-Current Controllable Thyristor * High Surge Capability * UL Recogn

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CGH27030S 30 W, DC - 6.0 GHz, 28 V, GaN HEMT Description Wolfspeed’s CGH27030S is an unmatched, gallium nitride (GaN) high electron mobility transist

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Fax Orders to 650-960-3875 Step Angle 1.8°±5% Insulation Resistant 500V DC 100MO Min Insulation Strength 50Hz 1Minute 500V Min Ambient Temperature -2

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THYRISTOR MODULE 200A / 1600V FEATURES * Isolated Base * 3 Phase Converter with Rush-Current Controllable Thyristor * High Surge Capability * UL Recog

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Low V CE(sat) High speed IGBT IXGH 25 N120 IXGH 25 N120A VCES 1200 V 1200 V IC25 50 A 50 A VCE(sat) 3V 4V Symbol Test Conditions VCES VCGR VGES

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FLAT TYPE METAL CLAD WIRE-WOUND Resistors GH Series (GH ) FEATURESFEATURES gHigh power rating, and ultra precision. gStandard winding & non-inductiv

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ＴＨＹＲＩＳＴＯＲ ■ CIRCUIT 200Ａ Ａvg 800 Ｖolts ■ OUTLINE DRAWING PGH200N8 Dimension:［mm］ ・ Part of Diode Bridge & Thyristor ■ Ｍaximum Ratings Parameter

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PRELIMINARY CGH27015F 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride (GaN) high electron mobility transistor desig

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HiPerFASTTM IGBT IXGH 24N60A VCES IC25 VCE(sat) tfi = = = = 600 V 48 A 2.7 V 275 ns www.DataSheet4U.com Symbol Test Conditions TJ = 25 °C to 150

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SEMICONDUCTOR TECHNICAL DATA KGH25N120NDA General Description KEC NPT IGBTs offer lowest losses and highest energy efficiency for application such a

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High Voltage IGBTs Preliminary Technical Information IXGH24N170A IXGT24N170A VCES = IC25 = VCE(sat) ≤ tfi(typ) = 1700V 24A 6.0V 40ns TO-247 (IXGH

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FEATURES Very Fast Charge/Discharge – High Power Density – Lower ESR – RoHS Compliant APPLICATIONS Battery Backup/Alternative – Pulse Power – Energ

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Ultra-Low VCE(sat) IGBT with Diode IXGH 28N60B IXGT 28N60B VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V Preliminary data Symbol www.DataSheet4U.com V

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CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride (GaN) high electron mobility tra

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PRELIMINARY CGH27060F 60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEM

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PRELIMINARY CGH27030F 30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27030F is a gallium nitride (GaN) high electron mobility transistor (HEM

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FEATURES Very Fast Charge/Discharge – High Power Density – Lower ESR – RoHS Compliant APPLICATIONS Battery Backup/Alternative – Pulse Power – Energ

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