GP120 Datasheet | Specifications & PDF Download

Technische Information / Technical Information IGBT-Module IGBT-Modules BSM50GP120 Elektrische Eigenschaften / Electrical properties Höchstzulässige

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VBGP1201N N-Channel 200 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () MAX. 200 0.010at VGS = 10 V ID (A) 110 Qg (TYP.) 75

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GP1200ESM33 GP1200ESM33 High Reliability Single Switch IGBT Module Advance Information Replaces July 2000 version, DS5308-1.6 DS5308-2.1 February 200

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AN-3289 APPLICATION NOTE VACUUM FLUORESCENT DISPLAY MODULE グラフィックディスプレイモジュール GP1202B02A モジュール『GP1202B02A』は、を した 160×64 のグラフィックモジュールです。 このモジュールは、、CPUびか

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Technische Information / Technical Information IGBT-Module IGBT-Modules BSM35GP120 Elektrische Eigenschaften / Electrical properties Höchstzulässi

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GP1200FSM18 GP1200FSM18 Hi-Reliability Single Switch IGBT Module DS5410-1.2 January 2001 FEATURES s s s s High Thermal Cycling Capability Non Punch

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GP1201FSS18 GP1201FSS18 Single Switch Low VCE(SAT) IGBT Module DS5411-1.1 January 2001 FEATURES s s s s s Low VCE(SAT) Non Punch Through Silicon Is

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AN-E-3283 APPLICATION NOTE VACUUM FLUORESCENT DISPLAY MODULE GRAPHIC DISPLAY MODULE GP1209A04A FUTABA GP1209A04A is a graphic display module using a F

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www.DataSheet4U.com Technische Information / Technical Information IGBT-Module IGBT-Modules BSM25GP120 Elektrische Eigenschaften / Electrical prope

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TYPICAL PERFORMANCE CURVES ® APT35GP120B2DQ2 APT35GP120B2DQ2G* APT35GP120B2DQ2(G) 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER

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GP1200FSS18 GP1200FSS18 Single Switch IGBT Module Replaces February 2000 version, DS5260-2.0 DS5260-3.1 January 2001 FEATURES s s s s Non Punch Thr

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Important Safety Notice Please read this note carefully before using the product. Warning • The module should be disconnected from the power supply

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APT35GP120J 1200V POWER MOS 7 IGBT G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT

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Important Safety Notice Please read this note carefully before using the product. Warning • The module should be disconnected from the power supply

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www.DataSheet4U.com APT25GP120B 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietar

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APT35GP120B 1200V POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is

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APT35GP120B2DF2 1200V POWER MOS 7 IGBT T-MaxTM ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technol

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GPxxx Series PPTC Thermistors (PPTC Resettable Fuses) Shenzhen Goodpoly Electron Co., Ltd. ¡÷ ¡÷ ¡÷ Radial leaded devices Very high voltage surge ca

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Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GP120 Elektrische Eigenschaften / Electrical properties Höchstzulässige

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