Galaxy Microelectronics Datasheet | Specifications & PDF Download

N-Channel Enhancement Mode MOSFET BL055N06T-5DL8 Features  Super low gate charge  Green device available  Excellent cdV / dt effect decline  Advan

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Production specification Schottky Power Rectifier FEATURES z z z z Guarding for stress protection. Low forward voltage. 125℃ Operating junction tempe

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Production specification Silicon Bridge Rectifiers FEATURES z z z z Rating to 1000V PRV Surge overload rating to300 Amperes peak Ideal for printed ci

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Production specification Silicon Bridge Rectifiers FEATURES z z z z Rating to 1000V PRV Surge overload rating to300 Amperes peak Ideal for printed ci

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Production specification Silicon Bridge Rectifiers FEATURES z z z z Rating to 1000V PRV Surge overload rating to300 Amperes peak Ideal for printed ci

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P-Channel Enhancement Mode MOSFET BL130P04-5DL8 Features  Super low gate charge  Green device available  Excellent cdV / dt effect decline  Advanc

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Production specification Silicon Bridge Rectifiers FEATURES z z z z Rating to 1000V PRV Surge overload rating to300 Amperes peak Ideal for printed ci

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Production specification Silicon Bridge Rectifiers FEATURES z z z z Rating to 1000V PRV Surge overload rating to300 Amperes peak Ideal for printed ci

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P-Channel Enhancement Mode MOSFET TBL950P10D Features  Super low gate charge  100% EAS guaranteed  Excellent CdV/dt effect decline  Advanced high

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P-Channel Enhancement Mode MOSFET TBL130P04-3DL8 Features  Super low gate charge  Green device available  Excellent cdV / dt effect decline  Advan

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Dual N-Channel Enhancement Mode MOSFET TGBLN6601-5DL8 Features  Super low gate charge  Green device available  Excellent CdV / dt effect decline 

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Production specification Silicon Bridge Rectifiers FEATURES z z z z Rating to 1000V PRV Surge overload rating to300 Amperes peak Ideal for printed ci

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Production specification Silicon Bridge Rectifiers FEATURES z z z z Rating to 1000V PRV Surge overload rating to300 Amperes peak Ideal for printed ci

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N-Channel Enhancement Mode MOSFET TBL170N10TD Features  Low RDS(ON) & FOM  Extremely low switching loss  Excellent stability and uniformity  Halog

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Features N-Channel Enhancement MOSFET TBL300N10D  Fast switching  Low gate charge and RDS(ON)  Low reverse transfer capacitance  Halogen free 

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