H-8-4N Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Volta

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UC1842, UC2842, UC3842, UC1843, UC2843, UC3843 UC1844, UC2844, UC3844, UC1845, UC2845, UC3845 SLUS223G – APRIL 1997 – REVISED JULY 2022 UCx84x Current

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HYBRID STEPPING MOTORS ƶ0.39in. ƶ1.10in. ƶ1.38in. ƶ1.53in. ƶ1.65in. ƶ2.22in. ‡2.25in. ƶ2.36in. ƶ3.35in. ‡3.39in. (ƶ10mm) (ƶ28mm) (ƶ35mm) (ƶ39mm) (ƶ42

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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R

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ISA04N60A N-Channel MOSFET Pb Lead Free Package and Finish Applications: • Adaptor • TV Main Power • SMPS Power Supply • LCD Panel Power VDSS 600

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isc N-Channel MOSFET Transistor 4N60 DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minim

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() Features • Uses CRM(CQ) advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according

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Quad Low Power Operational Amplifiers The LM324 series are low–cost, quad operational amplifiers with true differential inputs. They have several dist

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() Features • Uses CRM(CQ) advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according

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www.fairchildsemi.com LM324/LM324A, LM2902/LM2902A Quad Operational Amplifier Features • Internally Frequency Compensated for Unity Gain • Large DC V

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IPLU300N04S4-R8 OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating

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www.DataSheet4U.com Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL DESCRIPTION N-channel en

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MS4N1350 MS4N1350E MS4N1350B MS4N1350W MS4N1350FW N-channel 1500 V, 6 Ω, 4 A, Power MOSFET in TO-263,TO-247TO-220, TO-3PB, TO-3PF Features Type VDS

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PD -9.1484B www.DataSheet4U.com IRF9Z24N VDSS = -55V RDS(on) = 0.175Ω HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C

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Pulse-Width-Modulation Control Circuits TL494 FEATURES ● Complete PWM Power Control Circuitry ● Uncommitted Outputs for 200 mA Sink or Source Curren

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ICs for Audio Common Use AN7164N BTL 47W Audio Power Amplifier Circuit s Overview The AN7164N is an integrated circuit designed for 47W (VCC = 26.4V,

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SLP4N60C / SLF4N60C SLP4N60C/SLF4N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stri

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4N35, 4N36, 4N37 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection A1 C2 NC 3 6B 5C 4E 21842 i179004-5 DESCRIPTION E

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l Logic-Level Gate Drive l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l

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