H-8-4N Datasheet | Specifications & PDF Download

FQP4N90C / FQPF4N90C — N-Channel QFET® MOSFET FQP4N90C / FQPF4N90C N-Channel QFET® MOSFET 900 V, 4.0 A, 4.2 Ω December 2013 Description This N-Chan

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Volta

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HIGH VOLTAGE N-Channel MOSFET      WFU4N60/WFD4N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics

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MS4N1350 MS4N1350E MS4N1350B MS4N1350W MS4N1350FW N-channel 1500 V, 6 Ω, 4 A, Power MOSFET in TO-263,TO-247TO-220, TO-3PB, TO-3PF Features Type VDS

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Quad Low Power Operational Amplifiers The LM324 series are low–cost, quad operational amplifiers with true differential inputs. They have several dist

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UMC4N DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS Features • • • • • Epitaxial Planar Die Construction Surface Mount Package Suited for Automated Assem

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 4N90 ·DESCRIPTION ·Drain Current ID= 3.6A@ TC=25℃ ·Drain Source Vol

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Data Sheet N0604N N-channel MOSFET 60 V, 82 A, 6.5 mΩ Description The N0604N is N-channel MOS Field Effect Transistor designed for high current switc

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HYBRID STEPPING MOTORS ƶ0.39in. ƶ1.10in. ƶ1.38in. ƶ1.53in. ƶ1.65in. ƶ2.22in. ‡2.25in. ƶ2.36in. ƶ3.35in. ‡3.39in. (ƶ10mm) (ƶ28mm) (ƶ35mm) (ƶ39mm) (ƶ42

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP034N03L，IIPP034N03L ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.4mΩ ·Enhancem

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DATA SHEET www.onsemi.com MOSFET - Power, Single N-Channel 80 V, 4 mW, 110 A V(BR)DSS 80 V RDS(ON) MAX 4 mW @ 10 V 5.2 mW @ 4.5 V ID MAX 110 A NV

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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4.0mΩ ID 75A G UIS, Rg 100% Tested

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SM4024NSKP Features · 40V/60A, RDS(ON)= 4.6mW (max.) @ VGS=10V RDS(ON)= 5.9mW (max.) @ VGS=4.5V · Reliable and Rugged · Lead Free and Green Devices Av

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FQPF4N90 October 2001 QFET FQPF4N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pr

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 4N29/D 6-Pin DIP Optoisolators Darlington Output The 4N29/A, 4N30, 4N31, 4N32(1) and 4

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(t) §upertex inc. VN01 04N6 / VN0104N7 VN01 06N6 / VN0106N7 Ordering Information BVoss I BVDGS 40V SOV '14-pin Side Brazed Ceramic Dip. N-Channel En

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 200V D RDSON (MAX.) 140mΩ ID 15A G UIS, 100% Tested S

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