IG-MOS-FET Datasheet | Specifications & PDF Download

MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient

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Silan Microelectronics SD6834_Datasheet CURRENT MODE PWM+PFM CONTROLLER WITH BUILT-IN HIGH VOLTAGE MOSFET DESCRIPTION SD6834 is current mode PWM+P

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Shenzhen Tuofeng Semiconductor Technology co., LTD 4606 Complementary High Density Trench MOSFET PRODUCT SUMMARY (N-Channel) VDSS ID RDS(on) (m-ohm

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IGW60N60F General Description： Using advanced IGBT technology, the 600V IGBT. Offers superior conduction and switching performances. Lead Free Packa

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2SK2225 1500V - 2A - MOS FET High Speed Power Switching Application High speed power switching Features  High breakdown voltage (VDSS = 1500 V)  Hig

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TC4420 TC4429 6A HIGH-SPEED MOSFET DRIVERS FEATURES s s s s s s s s s s s s Latch-Up Protected Will Withstand >1.5A Reverse Output Curren

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Translated from Chinese (Simplified) to English - www.onlinedoctranslator.com IP3005 Ultra-high precision built-inMOSFETSingle lithium battery prote

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Dual N-Channel High Density Trench MOSFET N TYPE BVDSS - TXY8205A 20V ID 6A RDS(ON) (Typ.) () 23mΩ @VGS=4.5V 34mΩ @VGS=2.5V FEATURES High

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PC923 PC923 s Features 1. Built-in direct drive circuit for MOS-FET/ IGBT drive ( IO1P , I O2P : 0.4A) 2. High speed response ( t PLH , t PHL : MAX.

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MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient

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www.DataSheet4U.com BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N–Channel TO–92 MAXIMUM RATINGS Rating Drain–Source Volt

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Product Folder Order Now Technical Documents Tools & Software Support & Community UCC27323, UCC27324, UCC27325 UCC37323, UCC37324, UCC37325 SLUS4

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BS108 Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 This MOSFET is designed for high voltage, high speed switching applicatio

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TC4426/TC4427/TC4428 1.5A Dual High-Speed Power MOSFET Drivers Features: • High Peak Output Current: 1.5A • Wide Input Supply Voltage Operating Rang

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50N06 * '6 72  Available RoHS* COMPLIANT ' * 6 VDS ID VGS PD TJ Tstg EAS 52.4 Ciss Coss Crss VDS=2v, V GS=0V,f=1.0MHZ VDS=2v,V GS=0V,f=1.

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Order this document by MC34151/D High Speed Dual MOSFET Drivers The MC34151/MC33151 are dual inverting high speed drivers specifically designed for a

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TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGHĆSPEED MOSFET DRIVERS SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004 D Industry-Standard Drive

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PRELIMINARY PRODUCT BRIEF CHL8510 HIGH EFFICIENCY 6A BUCK MOSFET DRIVER FEATURES Drives both high-side and low-side MOSFETs in a synchronous buck con

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H Power MOSFET/IGBT Gate Drive Optocouplers Technical Data HCPL-3100 HCPL-3101 Features • High Output Current IO1 and IO2 (0.4 A Peak, 0.1 A Contin

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TPA90R350A,TPB90R350A,TPP90R350A,TPW90R350A Wuxi Unigroup Microelectronics Co.,Ltd 900V Super-junction Power MOSFET Description 900V Super-junction P

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