IG-MOS-FET Datasheet | Specifications & PDF Download

Shenzhen Tuofeng Semiconductor Technology co., LTD 4606 Complementary High Density Trench MOSFET PRODUCT SUMMARY (N-Channel) VDSS ID RDS(on) (m-ohm

(237 views)

Silan Microelectronics SD6834_Datasheet CURRENT MODE PWM+PFM CONTROLLER WITH BUILT-IN HIGH VOLTAGE MOSFET DESCRIPTION SD6834 is current mode PWM+P

(223 views)

TC4420 TC4429 6A HIGH-SPEED MOSFET DRIVERS FEATURES s s s s s s s s s s s s Latch-Up Protected Will Withstand >1.5A Reverse Output Curren

(153 views)

MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient

(128 views)

2SK2225 1500V - 2A - MOS FET High Speed Power Switching Application High speed power switching Features  High breakdown voltage (VDSS = 1500 V)  Hig

(127 views)

IGW60N60F General Description： Using advanced IGBT technology, the 600V IGBT. Offers superior conduction and switching performances. Lead Free Packa

(127 views)

Translated from Chinese (Simplified) to English - www.onlinedoctranslator.com IP3005 Ultra-high precision built-inMOSFETSingle lithium battery prote

(104 views)

TC4426/TC4427/TC4428 1.5A Dual High-Speed Power MOSFET Drivers Features: • High Peak Output Current: 1.5A • Wide Input Supply Voltage Operating Rang

(76 views)

PC923 PC923 s Features 1. Built-in direct drive circuit for MOS-FET/ IGBT drive ( IO1P , I O2P : 0.4A) 2. High speed response ( t PLH , t PHL : MAX.

(75 views)

NGD4300-Q100 4 A peak high-performance dual MOSFET gate driver Rev. 2.1 — 18 July 2025 Product data sheet 1. General description 2. Features and

(72 views)

VS4620DE-G 40V/14A Dual N-Channel Advanced Power MOSFET Features V DS R @ DS(on),TYP VGS=10V 40 V 9 mΩ  Dual N-Channel R @ DS(on),TYP VGS=4.5V

(71 views)

1 TC4420 TC4429 6A HIGH-SPEED MOSFET DRIVERS FEATURES s s s s s s s s s s s s Latch-Up Protected Will Withstand > 1.5A Reverse Output Cu

(69 views)

Order this document by MC34151/D High Speed Dual MOSFET Drivers The MC34151/MC33151 are dual inverting high speed drivers specifically designed for a

(66 views)

MM1001 LDMOS TRANSISTOR 10W, 28V High Power RF LDMOS FETs Description The MM1001 is a 10-watt, highly rugged, unmatched LDMOS FET, designed for wide-b

(65 views)

WEITRON Small Signal MOSFET N-Channel 3 DRAIN Features: *Low On-Resistance : 5Ω *Low Input Capacitance: 60PF *Low Out put Capacitance : 25PF *Low Th

(63 views)

TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGHĆSPEED MOSFET DRIVERS SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004 D Industry-Standard Drive

(62 views)

LT1910 Protected High Side MOSFET Driver FEATURES s s s s s s s DESCRIPTIO s s s 8V to 48V Power Supply Range Protected from –15V to 60V Supply Tra

(60 views)

TC4423 TC4424 TC4425 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS FEATURES s s s s s s High Peak Output Current 3A Wide

(57 views)

PC929 PC929 s Features 1. Built-in IGBT shortcircuit protector circuit 2. Built-in direct drive circuit for IGBT drive (Peak output current IO1P,

(56 views)

MK1040VP LDMOS TRANSISTOR 400W, 50V High Power RF LDMOS FETs Description The MK1040VP is a 400-watt, high performance, internally matched LDMOS FET,

(55 views)