IG-MOS-FET Datasheet | Specifications & PDF Download

Silan Microelectronics SD6834_Datasheet CURRENT MODE PWM+PFM CONTROLLER WITH BUILT-IN HIGH VOLTAGE MOSFET DESCRIPTION SD6834 is current mode PWM+P

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TC4420 TC4429 6A HIGH-SPEED MOSFET DRIVERS FEATURES s s s s s s s s s s s s Latch-Up Protected Will Withstand >1.5A Reverse Output Curren

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Shenzhen Tuofeng Semiconductor Technology co., LTD 4606 Complementary High Density Trench MOSFET PRODUCT SUMMARY (N-Channel) VDSS ID RDS(on) (m-ohm

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IGW60N60F General Description： Using advanced IGBT technology, the 600V IGBT. Offers superior conduction and switching performances. Lead Free Packa

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Translated from Chinese (Simplified) to English - www.onlinedoctranslator.com IP3005 Ultra-high precision built-inMOSFETSingle lithium battery prote

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2SK2225 1500V - 2A - MOS FET High Speed Power Switching Application High speed power switching Features  High breakdown voltage (VDSS = 1500 V)  Hig

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MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient

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TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGHĆSPEED MOSFET DRIVERS SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004 D Industry-Standard Drive

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www.DataSheet4U.com This Material Copyrighted By Its Respective Manufacturer www.DataSheet4U.com This Material Copyrighted By Its Respective Manufa

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ACPL-P349 and ACPL-W349 2.5-Amp Output Current SiC/GaN MOSFET and IGBT Gate Drive Optocoupler in Stretched SO6 Data Sheet Description The Broadcom®

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1 TC4421 TC4422 9A HIGH-SPEED MOSFET DRIVERS FEATURES s s s s Tough CMOS™ Construction High Peak Output Current 9A

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Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK120N30

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PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Description The PTFC210202FC integrates two independent 10-watt

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www.DataSheet4U.com High Voltage Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary Data Sheet VDSS ID25 3A 3A RDS(o

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Advance Technical Information GigaMOSTM HiperFETTM Power MOSFET IXFN140N25T VDSS ID25 = = RDS(on) ≤ ≤ trr N-Channel Enhancement Mode Avalanche Ra

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sales.Mr.wang13826508770 www.sztssd.com FINE MADE MICROELECTRONICS GROUP CO., LTD. DW02K(：S&CIC2035) MOSFET DW02K MOSFET ， 、、。 ，DW02K VD

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LTC1155 Dual High Side Micropower MOSFET Driver FEATURES n Fully Enhances N-Channel Power MOSFETs n 8µA Standby Current n 85µA ON Current n Short-C

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DIONICS, INC. 65 Rushmore Street Westbury, NY 11590 OPTO-ISOLATED PHOTOVOLTAIC ISO-GATETM MOSFET DRIVERS DIG-11-06-030 DIG-11-06-150 DIG-11-08-050 DI

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Advance Technical Information www.DataSheet4U.com GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrins

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High Voltage Power MOSFET IXTT02N450HV IXTH02N450HV VDSS I D25 RDS(on) = 4500V = 200mA  625 N-Channel Enhancement Mode Symbol VDSS VDGR VGSS V

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