IRFBC40 Datasheet | Specifications & PDF Download

www.vishay.com IRFBC40 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs

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® IRFBC40 N - CHANNEL 600V - 1.0 Ω - 6.2 A - TO-220 PowerMESH™ MOSFET TYPE IRFBC40 s s s s s V DSS 600 V R DS(on) < 1.2 Ω ID 6.2 A TYPICAL RDS(o

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SMPS MOSFET PD - 94986 IRFBC40APbF HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed

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IRFBC40 Data Sheet January 2002 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transist

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iscN-Channel MOSFET Transistor IRFBC40A ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.2Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFBC40R FEATURES ·Lower Input Capacitance ·Improved Gate Charge ·E

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IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 60 8.3

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IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 600 VGS = 10 V 60 Qgs (n

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iscN-Channel MOSFET Transistor IRFBC40 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.2Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V,

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iscN-Channel MOSFET Transistor IRFBC40L ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.2Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V

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IRFBC40 Data Sheet July 1999 File Number 2157.3 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field

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PD -91885A SMPS MOSFET IRFBC40A HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed p

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PD- 91897A SMPS MOSFET IRFBC40AS HEXFET® Power MOSFET Applications Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed po

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PD - 91016A IRFBC40S/L HEXFET® Power MOSFET l l l l l l l Surface Mount (IRFBC40S) Low-profile through-hole (IRFBC40L) Available in Tape & Reel (IRF

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PD - 91016A IRFBC40S/L HEXFET® Power MOSFET l l l l l l l Surface Mount (IRFBC40S) Low-profile through-hole (IRFBC40L) Available in Tape & Reel (IRF

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www.DataSheet4U.com PD - 95546 IRFBC40S/LPbF • Lead-Free www.irf.com 1 7/22/04 IRFBC40S/LPbF 2 www.irf.com IRFBC40S/LPbF www.irf.com 3 IR

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iscN-Channel MOSFET Transistor IRFBC40AS ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.2Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10

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www.vishay.com IRFBC40A Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qg

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Semiconductor IRFBC40, IRFBC42 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon

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