J211 Datasheet | Specifications & PDF Download

MJ21193 - PNP MJ21194 - NPN Silicon Power Transistors The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter technology and are specifically

(20 views)

N-Channel JFET CORPORATION J210 – J212 / SSTJ210 – SSTJ212 FEATURES DESCRIPTION The J210 Series is an N-Channel JFET single device encapsulated in a

(13 views)

J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212 J210 J211 J212 MMBFJ210 MMBFJ211 MMBFJ212 G S G S TO-92 D SOT-23 Mark: 62V / 62W / 62X D NO

(12 views)

ATJ2115C Product Datasheet www.DataSheet.net/ Latest Version: 1.0 2009-07-08 Datasheet pdf - http://www.DataSheet4U.co.kr/ ATJ2115C PRODUCT DATASHE

(11 views)

Silicon PNP Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE= 25-75@IC = -8A,VCE=-5V ·Collector-Emitter Saturation

(11 views)

Light Emitting Diodes This product complies with the RoHS Directive (EU 2002/95/EC). LNJ211R8ARU Surface Mounting Chip LED 3216 FD Type Forward cu

(10 views)

Silicon Power Transistors MJ21195G - PNP MJ21196G - NPN The MJ21195G and MJ21196G utilize Perforated Emitter technology and are specifically designed

(9 views)

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ21195/D MJ21195 Silicon Power Transistors The MJ21195 and MJ2119

(8 views)

J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 J211 J212 PRODUCT SUMMARY Part Number J210 J/SSTJ211 J/SSTJ212 SSTJ211 SSTJ212 VGS(off) (V)

(8 views)

Silicon Power Transistors MJ21195G - PNP MJ21196G - NPN The MJ21195G and MJ21196G utilize Perforated Emitter technology and are specifically designed

(8 views)

N-Channel RF Amplifier J211, MMBFJ211 Description This device is designed for HF/VHF mixer/amplifier and applications where process 50 is not adequat

(8 views)

J211 / MMBFJ211 — N-Channel RF Amplifier J211 / MMBFJ211 N-Channel RF Amplifier Description This device is designed for HF/VHF mixer/amplifier and ap

(8 views)

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors MJ21193 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·Complement

(7 views)

E-2 01/99 www.DataSheet4U.com Small Outline (Surface Mount) Package Devices N-Channel Silicon Junction Field-Effect Transistors Device Type BVGSS M

(7 views)

INCHANGE Semiconductor Silicon PNP Power Transistor DESCRIPTION ·Excellent Gain linearity ·High DC Current Gain- : hFE= 25(min) @IC = -8A ·Total Harm

(7 views)

MJ21193G/MJ21194G ® Pb Free Plating Product MJ21193G/MJ21194G Pb 250 Watt Silicon Type Metal Package Power Transistor The MJ21193 and MJ21194 ut

(7 views)

Silicon NPN Power Transistor MJ21194 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE= 25-75@IC = 8A,VCE= 5V ·Collector-Emitter Sa

(7 views)

N-Channel RF Amplifier J211, MMBFJ211 Description This device is designed for HF/VHF mixer/amplifier and applications where process 50 is not adequat

(7 views)

Light Emitting Diodes This product complies with the RoHS Directive (EU 2002/95/EC). LNJ211R8ARA Surface Mounting Chip LED 3216 Type Forward curre

(6 views)

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ211 P-CHANNEL MOSFET FOR SWITCHING The 2SJ211, P-channel vertical type MOSFET, is a switching device which

(6 views)