J211 Datasheet | Specifications & PDF Download

MJ21193 - PNP MJ21194 - NPN Silicon Power Transistors The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter technology and are specifically

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CJ (ACJ) SUPER MINIATURE PC BOARD TYPE AUTOMOTIVE RELAY CJ RELAYS (ACJ) TYPICAL APPLICATIONS • Powered windows • Automatic door locks • Electrically

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INCHANGE Semiconductor Silicon PNP Power Transistor DESCRIPTION ·Excellent Gain linearity ·High DC Current Gain- : hFE= 25(min) @IC = -8A ·Total Harm

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J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212 J210 J211 J212 MMBFJ210 MMBFJ211 MMBFJ212 G S G S TO-92 D SOT-23 Mark: 62V / 62W / 62X D NO

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ21193/D Silicon Power Transistors The MJ21193 and MJ21194 utilize Perforated Emitter

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ21195/D MJ21195 Silicon Power Transistors The MJ21195 and MJ2119

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ21195/D MJ21195 Silicon Power Transistors The MJ21195 and MJ2119

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www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJ21194 DESCRIPTION ·With TO-3 package ·Complement

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CJ (ACJ) SUPER MINIATURE PC BOARD TYPE AUTOMOTIVE RELAY CJ RELAYS (ACJ) TYPICAL APPLICATIONS • Powered windows • Automatic door locks • Electrically

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Silicon Power Transistors MJ21195G - PNP MJ21196G - NPN The MJ21195G and MJ21196G utilize Perforated Emitter technology and are specifically designed

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Silicon Power Transistors MJ21195G - PNP MJ21196G - NPN The MJ21195G and MJ21196G utilize Perforated Emitter technology and are specifically designed

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MJ21193G/MJ21194G ® Pb Free Plating Product MJ21193G/MJ21194G Pb 250 Watt Silicon Type Metal Package Power Transistor The MJ21193 and MJ21194 ut

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Silicon PNP Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE= 25-75@IC = -8A,VCE=-5V ·Collector-Emitter Saturation

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N-Channel RF Amplifier J211, MMBFJ211 Description This device is designed for HF/VHF mixer/amplifier and applications where process 50 is not adequat

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ211 P-CHANNEL MOSFET FOR SWITCHING The 2SJ211, P-channel vertical type MOSFET, is a switching device which

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DISCRETE SEMICONDUCTORS DATA SHEET J210; J211; J212 N-channel field-effect transistors Product specification File under Discrete Semiconductors, SC07

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MJ21195G/MJ21196G ® Pb Free Plating Product MJ21195G/MJ21196G Pb 250 Watt Silicon Type Metal Package Power Transistor The MJ21195 and MJ21196 ut

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MJ21195G/MJ21196G ® Pb Free Plating Product MJ21195G/MJ21196G Pb 250 Watt Silicon Type Metal Package Power Transistor The MJ21195 and MJ21196 ut

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MJ21193 - PNP MJ21194 - NPN Silicon Power Transistors The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter technology and are specifically

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www.DataSheet4U.com MJ21195 − PNP MJ21196 − NPN Preferred Devices Silicon Power Transistors The MJ21195 and MJ21196 utilize Perforated Emitter techn

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