K365 Datasheet | Specifications & PDF Download

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK365 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Ap

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DATA SHEET www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR 2SK3659 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3659 is N-channel MOS FET d

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isc N-Channel MOSFET Transistor 2SK3651-01R FEATURES ·Drain Current : ID= 25A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source O

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SMD Type Transistors IC N-channel Enhancement Mode MOSFET 2SK3652 TO-263 + 0 .1 1 .2 7 -0 .1 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Low on-r

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This product complies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs 2SK3652 N-channel enhancement mode MOSFET 3.3±0.3Product lifecyclennuaen

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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK365 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Ap

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isc N-Channel MOSFET Transistor 2SK3650-01L FEATURES ·Drain Current : ID= 33A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source O

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www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3659 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3659 is N-channel MOS FET

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2SK3656 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3656 VHF- and UHF-band Amplifier Applications Unit: mm (Note)The TOSHIBA produc

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DATA SHEET www.DataSheet4U.com JUNCTION FIELD EFFECT TRANSISTOR 2SK3653B N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER

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2SK3658 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV) 2 2SK3658 DC−DC Converter, Relay Drive and Motor Drive Applications z

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2SK3650-01L,S,SJ FUJI POWER MOSFET 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low

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2SK3650-01L,S,SJ FUJI POWER MOSFET 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low

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This product complies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs 2SK3652 N-channel enhancement mode MOSFET 3.3±0.3Product lifecyclennuaen

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isc N-Channel MOSFET Transistor 2SK3659 FEATURES ·Drain Current : ID= 25A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Re

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2SK3650-01L,S,SJ FUJI POWER MOSFET 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low

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isc N-Channel MOSFET Transistor 2SK3650-01S FEATURES ·Drain Current : ID= 33A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source O

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isc N-Channel MOSFET Transistor 2SK3650-01SJ FEATURES ·Drain Current : ID= 33A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source

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www.DataSheet4U.com 2SK3651-01R FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low drivi

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www.DataSheet4U.com DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3653C N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTE

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