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Infineon
IMW120R030M1H - MOSFET
IMW120R030M1H IMW120R030M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Very low switching losses Threshold-free on state c.
Infineon
IMW120R350M1H - Silicon Carbide MOSFET
IMW120R350M1H IMW120R350M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Very low switching losses Gate pin 1 Threshold-.
Infineon
IMW120R090M1H - Silicon Carbide MOSFET
IMW120R090M1H IMW120R090M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Very low switching losses Gate pin 1 Threshold-.
Infineon
IMW65R107M1H - MOSFET
IMW65R107M1H MOSFET 650 V CoolSiCª M1 SiC Trench Power Device The 650 V CoolSiC™ is built over the solid silicon carbide technology developed in Infi.
Infineon
AIMZA75R020M1H - MOSFET
AIMZA75R020M1H MOSFET CoolSiCª Automotive Power Device 750 V G1 The 750 V CoolSiC™ is built over the solid silicon carbide technology developed in In.
Infineon
AIMBG75R090M1H - MOSFET
AIMBG75R090M1H MOSFET CoolSiCª Automotive Power Device 750 V G1 The 750 V CoolSiC™ is built over the solid silicon carbide technology developed in In.
Lelon Electronics
TB680M1HBK - Aluminum Electrolytic Capacitors
TB/TBL Features Aluminum Electrolytic Capacitors CE02 Type • 85℃, 1000 hours assured, • Bi-polarized, excellent high frequency response characterist.
Infineon
IMW120R220M1H - Silicon Carbide MOSFET
IMW120R220M1H IMW120R220M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Very low switching losses Gate pin 1 Threshold-.
Infineon
IMZA65R107M1H - MOSFET
Public IMZA65R107M1H Final datasheet CoolSiC™ M1 CoolSiC™ MOSFET 650 V G1 The 650 V CoolSiC™ is built over the solid silicon carbide technology devel.
Infineon
IMT65R072M1H - MOSFET
IMT65R072M1H MOSFET 650 V CoolSiCª M1 SiC Trench Power Device The 650 V CoolSiC™ is built over the solid silicon carbide technology developed in Infi.
Infineon
IMT65R030M1H - MOSFET
IMT65R030M1H MOSFET 650 V CoolSiCª M1 SiC Trench Power Device The 650 V CoolSiC™ is built over the solid silicon carbide technology developed in Infi.
Infineon
IMW120R007M1H - MOSFET
IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj = 25°C • ID.
Infineon
IMW65R027M1H - MOSFET
IMW65R027M1H MOSFET 650 V CoolSiCª M1 SiC Trench Power Device The 650 V CoolSiC™ is built over the solid silicon carbide technology developed in Infi.
Infineon
AIMBG75R016M1H - MOSFET
AIMBG75R016M1H MOSFET CoolSiCª Automotive Power Device 750 V G1 The 750 V CoolSiC™ is built over the solid silicon carbide technology developed in In.
Infineon
AIMDQ75R040M1H - MOSFET
AIMDQ75R040M1H MOSFET CoolSiCª Automotive Power Device 750 V G1 PG-HDSOP-22 The 750 V CoolSiC™ is built over the solid silicon carbide technology .
Infineon
IMT65R039M1H - MOSFET
IMT65R039M1H MOSFET 650 V CoolSiCª M1 SiC Trench Power Device The 650 V CoolSiC™ is built over the solid silicon carbide technology developed in Infi.
Infineon
IMZA75R020M1H - MOSFET
IMZA75R020M1H MOSFET CoolSiCª Power Device 750 V G1 The 750 V CoolSiC™ is built over the solid silicon carbide technology developed in Infineon in mo.
Infineon
IMZA75R040M1H - MOSFET
IMZA75R040M1H MOSFET CoolSiCª Power Device 750 V G1 The 750 V CoolSiC™ is built over the solid silicon carbide technology developed in Infineon in mo.
Tyco Electronics
M1H - Double-Balanced Mixer
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