M1H Datasheet | Specifications & PDF Download

IMZ120R140M1H IMZ120R140M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state c

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AIMDQ75R008M1H MOSFET CoolSiCª Automotive Power Device 750 V G1 PG-HDSOP-22 The 750 V CoolSiC™ is built over the solid silicon carbide technology

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IMZ120R060M1H IMZ120R060M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state c

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IMYH200R024M1H CoolSiC™ 2000 V SiC Trench MOSFET CoolSiC™ 2000 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology Feat

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Replaces DS6329-2 TRENCH Gen5 TMOS DIM600M1HS17-PA500 Half Bridge IGBT Module DS6329-3 September 2021 (LN41204) FEATURES • Trench Gate IGBT • High

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AIMDQ75R060M1H MOSFET CoolSiCª Automotive Power Device 750 V G1 PG-HDSOP-22 The 750 V CoolSiC™ is built over the solid silicon carbide technology

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IMYH200R100M1H CoolSiC™ 2000 V SiC Trench MOSFET CoolSiC™ 2000 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology Feat

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IMZA120R030M1H CoolSiC™ 1200 V SiC Trench MOSFET Final datasheet CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection

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IMDQ75R090M1H MOSFET CoolSiCª Power Device 750 V G1 PG-HDSOP-22 The 750 V CoolSiC™ is built over the solid silicon carbide technology developed i

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AIMBG75R090M1H MOSFET CoolSiCª Automotive Power Device 750 V G1 The 750 V CoolSiC™ is built over the solid silicon carbide technology developed in In

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AIMBG75R060M1H MOSFET CoolSiCª Automotive Power Device 750 V G1 The 750 V CoolSiC™ is built over the solid silicon carbide technology developed in In

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ALUMINUM ELECTROLYTIC CAPACITORS PM Extremely Low Impedance, High Reliability series High reliability withstanding 5000 hour load life at +105°C (3000

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AIMBG75R016M1H MOSFET CoolSiCª Automotive Power Device 750 V G1 The 750 V CoolSiC™ is built over the solid silicon carbide technology developed in In

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AIMDQ75R027M1H MOSFET CoolSiCª Automotive Power Device 750 V G1 PG-HDSOP-22 The 750 V CoolSiC™ is built over the solid silicon carbide technology

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IMYH200R050M1H CoolSiC™ 2000 V SiC Trench MOSFET CoolSiC™ 2000 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology Feat

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Public AIMZA75R008M1H Final datasheet MOSFET CoolSiC™ Automotive Power Device 750 V G1 The 750 V CoolSiC™ is built over the solid silicon carbide tec

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IMBG120R030M1H IMBG120R030M1H CoolSiC™ 1200V SiC Trench MOSFET with .XT interconnection technology Features  Very low switching losses  Short circu

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IMZA120R040M1H CoolSiC™ 1200 V SiC Trench MOSFET Final datasheet CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection

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IMBG120R045M1H IMBG120R045M1H CoolSiC™ 1200V SiC Trench MOSFET with .XT interconnection technology Features • Very low switching losses • Short circu

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AIMBG75R040M1H MOSFET CoolSiCª Automotive Power Device 750 V G1 The 750 V CoolSiC™ is built over the solid silicon carbide technology developed in In

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