.
Qorvo
QPD1006 - RF IMFET
QPD1006 450W, 50V, 1.2 – 1.4 GHz, GaN RF IMFET Product Overview The QPD1006 is a 450 W (P3dB) internally matched discrete GaN on SiC HEMT which opera.
IXYS Corporation
IXTN21N100 - High Voltage MegaMOSTMFETs
High Voltage MegaMOSTMFETs IXTK 21N100 IXTN 21N100 VDSS = 1000 V = 21 A ID25 RDS(on) = 0.55 Ω N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol V.
IXYS Corporation
IXTH14N100 - MegaMOSTMFET
IXTH 14N100 VDSS MegaMOSTMFET N-Channel Enhancement Mode ID25 RDS(on) = 1000 V = 14 A = 0.82 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg M.
IXYS
IXTH14N80 - MegaMOS MFET
MegaMOSTMFET N-Channel Enhancement Mode IXTH 14N80 VDSS = 800 V ID25 = 14 A RDS(on) = 0.70 Ω Symbol Test Conditions VDSS V DGR VGS VGSM ID25 IDM .
qorvo
QPD1018 - GaN RF IMFET
QPD1018 500W, 50V, 2.7 – 3.1 GHz, GaN RF IMFET Product Overview The QPD1018 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which opera.
Qorvo
QPD1019 - GaN RF IMFET
QPD1019 ® 500 W, 50 V, 2.9 – 3.3 GHz, GaN RF IMFET Product Overview The QPD1019 is a 500W (P3dB) internally matched discrete GaN on SiC HEMT which .
IXYS Corporation
L034 - MegaMOSTMFET Module
MegaMOSTMFET Module N-Channel Enhancement Mode VMO 380-02 F VDSS ID25 RDS(on) 1 11 = 200 V = 385 A = 4.6 mΩ Preliminary data 10 2 11 2 1 10 Symbol.
Qorvo
QPD1003 - GaN RF IMFET
QPD1003 500W, 50V, 1.2 – 1.4 GHz, GaN RF IMFET Product Overview The QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which opera.