MFET Datasheet | Specifications & PDF Download

QPD1006 450W, 50V, 1.2 – 1.4 GHz, GaN RF IMFET Product Overview The QPD1006 is a 450 W (P3dB) internally matched discrete GaN on SiC HEMT which opera

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MegaMOSTMFET N-Channel Enhancement Mode IXTH 14N80 VDSS = 800 V ID25 = 14 A RDS(on) = 0.70 Ω Symbol Test Conditions VDSS V DGR VGS VGSM ID25 IDM

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High Voltage MegaMOSTMFETs IXTK 21N100 IXTN 21N100 VDSS = 1000 V = 21 A ID25 RDS(on) = 0.55 Ω N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol V

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QPD1003 500W, 50V, 1.2 – 1.4 GHz, GaN RF IMFET Product Overview The QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which opera

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QPD1019 ® 500 W, 50 V, 2.9 – 3.3 GHz, GaN RF IMFET Product Overview The QPD1019 is a 500W (P3dB) internally matched discrete GaN on SiC HEMT which

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IXTH 14N100 VDSS MegaMOSTMFET N-Channel Enhancement Mode ID25 RDS(on) = 1000 V = 14 A = 0.82 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg M

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MegaMOSTMFET Module N-Channel Enhancement Mode VMO 380-02 F VDSS ID25 RDS(on) 1 11 = 200 V = 385 A = 4.6 mΩ Preliminary data 10 2 11 2 1 10 Symbol

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QPD1018 500W, 50V, 2.7 – 3.1 GHz, GaN RF IMFET Product Overview The QPD1018 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which opera

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