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MJD122 MJD127 Complementary power Darlington transistors Features ■ Low collector-emitter saturation voltage ■ Integrated antiparallel collector-emit

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJF122 www.datasheet4u.com DESCRIPTION ·With TO-220F package ·DARLINGT

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD122 DESCRIPTION ·High DC current gain ·Built-in a damper diode at E-C ·Monoli

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Embedded Power for Business-Critical Continuity BXA40 Series Single output Total Power: 40W Input Voltage: 18 - 36VDC 36 - 75VDC # of Outputs: Single

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11012/D High-Current Complementary Silicon Transistors ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ

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SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE PLASTIC MATERIAL USED CARRIES UL 94V-0 Marking Zener Voltage VZ (V) @ IZT Min Nom Max Test cur

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INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor MJD127 DESCRIPTION ·Low Collector-Emitter saturation voltage ·Lead formed for su

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJW16212/D MJF18002 (See MJE18002) MJF18004 (See MJE18004) MJF18006 (See MJE18006) SC

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ16010/D MJ16010 Designer's SWITCHMODE Series NPN Silicon Power Transistors These tr

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MF122/D Complementary Power Darlingtons • • • • • • • MJF122 PNP MJF127 COMPLEMENTARY

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MCC R Micro Commercial Components Micro Commercial Components 130 W Cochran St, Unit B Simi Valley, CA 93065 Tel:818-701-4933 Features • Halogen fre

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isc Silicon PNP Power Transistor MJ15012 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE= 20(Min.)@IC = -2A ·Collector-Emitter Sa

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MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general p

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Epitaxial Planar NPN Transistor FEATURES  High DC Current Gain.  Built-in a Damper Diode at E-C. Pb Lead-free  Lead Formed for Surface Mount Ap

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MJD122-1 / MJD122T4 MJD127-1 / MJD127T4 COMPLEMENTARY POWER DARLINGTON TRANSISTORS Ordering Code MJD122T4 MJD122-1 MJD127T4 MJD127-1 s s s Marking MJ

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD122/D Complementary Darlington Power Transistors DPAK For Surface Mount Application

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MF122/D Complementary Power Darlingtons • • • • • • • MJF122 PNP MJF127 COMPLEMENTARY

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Epitaxial Planar PNP Transistor FEATURES  High DC Current Gain.  Built-in a Damper Diode at E-C. Pb Lead-free  Lead Formed for Surface Mount Ap

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MJ21294 NPN Silicon Power Transistor With superior safe operating area performance, this power transistor is ideal for high temperature linear control

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MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS KZH Lower Z Low impedance, 105C @Ultra Low impedance for Personal Computers Storage Equipment @Endurance

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