Part number:
MJD127
Manufacturer:
GME
File Size:
173.41 KB
Description:
Epitaxial planar pnp transistor.
* High DC Current Gain.
* Built-in a Damper Diode at E-C. Pb Lead-free
* Lead Formed for Surface Mount Applications.
* Straight Lead.
* Complement to MJD122. Production specification MJD127 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise
MJD127
GME
173.41 KB
Epitaxial planar pnp transistor.
📁 Related Datasheet
MJD122 Epitaxial Planar NPN Transistor (GME)
MJD122 Complementary Darlington Power Transistor (ON Semiconductor)
MJD122 Complementary power Darlington transistors (ST Microelectronics)
MJD122 NPN Silicon Darlington Transistor (Fairchild)
MJD122 SILICON POWER TRANSISTORS (Motorola)
MJD122 Silicon NPN Darlington Power Transistor (Inchange Semiconductor)
MJD122 SMD Darlington Power Transistor (TAITRON)
MJD122 NPN Transistor (JCET)
MJD122 Silicon NPN epitaxial planer Transistors (MCC)
MJD122-1 COMPLEMENTARY POWER DARLINGTON TRANSISTORS (ST Microelectronics)
