MJE180 Datasheet | Specifications & PDF Download

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18002/D ™ Data Sheet SWITCHMODE™ Designer's NPN Bipolar Power Transistor For Switc

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJE180/181/182 www.datasheet4u.com DESCRIPTION ·With TO-126 package ·C

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package www.datasheet4u.com ·High voltage ,high

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18008/D ™ Data Sheet SWITCHMODE™ Designer's MJE18008 * MJF18008 * *Motorola Prefer

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJE180/181/182 www.datasheet4u.com DESCRIPTION ·With TO-126 package ·C

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-to-Lot vari

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18002D2/D MJE18002D2 Advance Information High Speed, High Gain Bipolar NPN Power T

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www.DataSheet4U.com MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Preferred Device Complementary Plastic Silicon Power Transistors The

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJE18002 www.datasheet4u.com DESCRIPTION ·With TO-220 package ·High vo

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MJE180 Silicon NPN Transistor Low Power Audio Amp, Low Current, High Speed Switch TO−126 Type Package Absolute Maximum Ratings: (TC = +25C unless ot

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isc Silicon NPN Power Transistor MJE18004G DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed ·G:Pb-Free Pa

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-to-Lot vari

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-to-Lot vari

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MJE180/181/182 MJE180/181/182 Low Power Audio Amplifier Low Current High Speed Switching Applications 1 TO-126 2.Collector 3.Base NPN Epitaxial Si

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18004/D ™ Data Sheet SWITCHMODE™ Designer's NPN Bipolar Power Transistor For Switc

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MJE18004, MJF18004 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004 have an applications specific s

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJE18008 www.datasheet4u.com DESCRIPTION ·With TO-220C package ·High v

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-to-Lot vari

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-126 (SOT-32) Plastic Package MJE170, MJE171, MJE172 MJE

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