| No |
Part Number |
Description |
Manufacture |
PDF |
| 35 |
MMBTH10 |
VHF/UHF TRANSISTOR
MMBTH10
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB) VHF/UHF TRANSISTOR
NPN SILICON
Refer to MPSH10 for graphs.
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Vo |
Motorola
|
|
| 34 |
MMBTH10 |
NPN Epitaxial Planar Transistor
Elektronische Bauelemente
MMBTH10
50 mA, 30 V NPN Epitaxial Planar Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen and lead free
DESCRIPTION
The MMBTH10 is designed for use |
SeCoS
|
|
| 33 |
MMBTH10 |
NPN VHF/UHF Transistors
MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
MMBTH10
Features
• Lead Free Finish/RoHS Com |
MCC
|
|
| 32 |
MMBTH10 |
Silicon Epitaxial Planar Transistor
Silicon Epitaxial Planar Transistor
FEATURES
z High transition frequency. z Power dissipation.(PC=350mW).
Pb
Lead-free
APPLICATIONS
z VHF/UHF Transistor.
Production specification
MMBTH10
ORDERING |
GME
|
|
| 31 |
MMBTH10 |
NPN SURFACE MOUNT VHF/UHF TRANSISTOR
MMBTH10
NPN SURFACE MOUNT VHF/UHF TRANSISTOR
Features
• Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators
• High Current Gain Bandwidth Product • Ideal for Mixer and |
Diodes Incorporated
|
|
| 30 |
MMBTH10 |
NPN RF Transistor
MPSH10 / MMBTH10
Discrete POWER & Signal Technologies
MPSH10
MMBTH10
C
E C E
TO-92
B
SOT-23
Mark: 3E
B
NPN RF Transistor
This device is designed for use in low noise UHF/VHF amplifiers, with c |
Fairchild
|
|
| 29 |
MMBTH10 |
NPN Silicon VHF/UHF Transistor
MMBTH10
NPN Silicon VHF/UHF Transistor
P b Lead(Pb)-Free
BASE COLLECTOR
3 1 2
SOT-23
EMITTER
MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Emitter Voltage Collector-Base Voltage E |
Weitron Technology
|
|
| 28 |
MMBTH10 |
RF TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD MMBTH10
RF TRANSISTOR
DESCRIPTION
NPN SILICON TRANSISTOR
The UTC MMBTH10 is designed for using as VHF and UHF oscillators and VHF Mixer in a tu |
UTC
|
|
| 27 |
MMBTH10 |
NPN HIGH FREQUENCY TRANSISTOR
MMBTH10
NPN HIGH FREQUENCY TRANSISTOR
This device is designed for VHF/UHF amplifier applications and high output VHF oscillators.
3 COLLECTOR
SPECIFICATION FEATURES
Guaranteed Minimum Current Gain- |
Pan Jit International
|
|
| 26 |
MMBTH10 |
Silicon Epitaxial Planar Transistor
BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
z High transition frequency. z Power dissipation.(PC=350mW)
Pb
Lead-free
APPLICATIONS
z VHF/UHF Transistor.
Production specificat |
Galaxy Electrical
|
|
| 25 |
MMBTH10 |
SMD VHF/UHF Transistor
SMD VHF/UHF Transistor (NPN) MMBTH10
SMD VHF/UHF Transistor (NPN)
Features
• NPN Silicon Epitaxial Planar Transistor • RoHS compliance
Mechanical Data
Case: Terminals:
Weight:
SOT-23, Plastic P |
TAITRON
|
|
| 24 |
MMBTH10 |
NPN Silicon VHF/UHF Transistor
MMBTH10
NPN Silicon VHF/UHF Transistor
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Total Device Dissipation FR- |
SEMTECH
|
|
