Microwave Semiconductor Datasheet | Specifications & PDF Download

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.5dBm at 6.4GHz to 7.2GHz ･HIGH GAIN G1dB= 8.0dB at 6.4GHz to 7.2GHz ･LOW INTERMODULAT

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www.DataSheet4U.com SD1425 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1425 is Designed for Class AB Linear Base Station Applications in

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www.DataSheet4U.com TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES MICROWAVE POWER GaAs FET TIM1011-2L HIGH POWER P1dB=33.5dBm at 10.7GHz

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CHU2277a98F RoHS COMPLIANT W-band Multifunction: Multiplier / MPA GaAs Monolithic Microwave IC Description The CHU2277a is a W-band monolithic multi

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CND2047-DAG RoHS COMPLIANT 9GHz Frequency Divider by 4 Fixed Modulus Prescaler GaAs Monolithic Microwave IC Description The CND2047 is a low power

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CHT4012-98F RoHS COMPLIANT DC-6GHz 6-BIT DIGITAL ATTENUATOR GaAs Monolithic Microwave IC Description The CHT4012-98F is a DC-6GHz monolithic 6 bit d

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HiRel NPN Silicon RF Transistor Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low power amplifiers at collector currents from 0.2 to 2.5

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FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 48.0dBm at 5.9GHz to 6.4GHz ･HIGH GAIN G1dB= 8.5dB at 5.9GHz to 6.4GHz ･LOW INTERMODULAT

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CHR2294 RoHS COMPLIANT 25-35GHz Single Side Band Mixer Self biased GaAs Monolithic Microwave IC Description The CHR2294 is a multifunction chip (MF

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HiRel NPN Silicon RF Transistor Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector cur

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CHC3014 RoHS Compliant X-band RX-TX Core Chip GaAs Monolithic Microwave IC Description The CHC3014 is a Receive and Transmit X band Core Chip. It in

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MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA TMD7185-2 FEATURES n HIGH POWER P1dB=33.0dBm at 7.1GHz to 8.5GHz n HIGH GAIN G

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