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GEC Plessey Semiconductors
DC1281 - (DC1250/70/80 Series) High Power Microwave Gunn Diodes
www.DataSheet4U.com DataShee DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataShee DataSheet4U.com DataShe.
Toshiba Semiconductor
TIM1011-2L - MICROWAVE POWER GaAs FET
www.DataSheet4U.com TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES MICROWAVE POWER GaAs FET TIM1011-2L HIGH POWER P1dB=33.5dBm at 10.7GHz.
Toshiba Semiconductor
TIM1011-5L - MICROWAVE POWER GaAs FET
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 37.5dBm at 10.7GHz to 11.7GHz ･HIGH GAIN G1dB= 7.0dB at 10.7GHz to 11.7GHz ･HERMETICALLY.
Toshiba Semiconductor
TIM1011-8L - MICROWAVE POWER GaAs FET
www.DataSheet4U.com MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1011-8L TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dB.
United Monolithic Semiconductors
CHC3014 - X-band RX-TX Core Chip GaAs Monolithic Microwave IC
CHC3014 RoHS Compliant X-band RX-TX Core Chip GaAs Monolithic Microwave IC Description The CHC3014 is a Receive and Transmit X band Core Chip. It in.
Toshiba Semiconductor
TMD7185-2 - MICROWAVE POWER MMIC AMPLIFIER
MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA TMD7185-2 FEATURES n HIGH POWER P1dB=33.0dBm at 7.1GHz to 8.5GHz n HIGH GAIN G.
Toshiba Semiconductor
TIM5964-60SL - MICROWAVE POWER GaAs FET
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 48.0dBm at 5.9GHz to 6.4GHz ･HIGH GAIN G1dB= 8.5dB at 5.9GHz to 6.4GHz ･LOW INTERMODULAT.
Toshiba Semiconductor
TIM5964-80SL - MICROWAVE POWER GaAs FET
MICROWAVE POWERwww.DataSheet4U.com GaAs FET MICROWAVE SEMICONDUCTOR TIM5964-80SL TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-30 dB.
United Monolithic Semiconductors
CND2047-DAG - GaAs Monolithic Microwave IC
CND2047-DAG RoHS COMPLIANT 9GHz Frequency Divider by 4 Fixed Modulus Prescaler GaAs Monolithic Microwave IC Description The CND2047 is a low power.
United Monolithic Semiconductors
CHM1191 - GaAs Monolithic Microwave IC
CHM1191 K Band Mixer GaAs Monolithic Microwave IC Description The CHM1191 is a balanced Schottky diode mixer based on a six quarter wave ring structur.
Siemens Semiconductor Group
BFY180 - HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA)
HiRel NPN Silicon RF Transistor Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low power amplifiers at collector currents from 0.2 to 2.5.
Siemens Semiconductor Group
BFY181 - HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)
HiRel NPN Silicon RF Transistor Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector cur.
Siemens Semiconductor Group
BFY182 - HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)
HiRel NPN Silicon RF Transistor Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector cur.
Siemens Semiconductor Group
BFY193 - HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise/ high gain broadband amplifiers up to 2 GHz.)
HiRel NPN Silicon RF Transistor Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers up to 2 GHz. ¥ F.
Siemens Semiconductor Group
BAT14-113 - HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications)
HiRel Silicon Schottky Diode Features ¥ HiRel Discrete and Microwave Semiconductor ¥ Medium barrier diodes for detector and mixer applications ¥ Herme.
Toshiba Semiconductor
TIM6472-12UL - MICROWAVE POWER GaAs FET
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 41.5dBm at 6.4GHz to 7.2GHz ･HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz ･LOW INTERMODULAT.
