N-ChanneI Datasheet | Specifications & PDF Download

UMW AO4828 60V Dual N-ChanneI MOSFET 1.Description The AO4828 uses advanced trench technology to provide excellent RDS(ON), low gate charge and opera

(2 views)

UMW FDS3672 100V N-ChanneI MOSFET 1.Features ID=7.5A RDS(ON)=23mΩ(VGS=10V) Qg(tot) = 28nC(Typ.),VGS=10V Low Miller Charge 2.Applications DC/DC conver

(2 views)

UMW FDN302P P-ChanneI MOSFET 1.Description This P-Channel 2.5V has been optimized for power management applications with a wide range of gate drive v

(2 views)

UMW SI2302A 20V N-ChanneI MOSFET 1.Description The SI2302A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operatio

(2 views)

UMW NTMD3P03R2G Dual -30V P-ChanneI MOSFET 1.Features VDS (V)=-30V RDS(ON)<85mΩ(VGS=-10V) RDS(ON)<125mΩ(VGS=-4.5V) High Density Power MOSFET with Low

(2 views)

UMW SI2319A -40V P-ChanneI MOSFET 1.Features VDS(V)=-40V RDS(ON)<70mΩ(VGS=10V), ID=-4.4A RDS(ON)<95mΩ(VGS=4.5V), ID=-3.5A 3.Pinning information Pin

(2 views)

UMW IRLML6302TR -20V P-ChanneI MOSFET 1.Features VDS (V)=-20V RDS(ON)<90mΩ(VGS=-4.5V) RDS(ON)<110mΩ(VGS=-2.7V) Lead-Free P-Channel MOSFET SOT-23 Foo

(2 views)

UMW STN4438 60V N-ChanneI MOSFET 1.Description STN4438 is the N-Channel logicenhancement mode power field effect transistor which is produced using h

(2 views)

UMW SI2306A 30V N-ChanneI MOSFET 1.Description The SI2306A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operatio

(2 views)

UMW AOSP21321 -30V P-ChanneI MOSFET 1.Features VDS=-30V ID=-11A(VGS=-10V) RDS(ON)<17mΩ (VGS=-10V) RDS(ON) <30mΩ(VGS=-4.5V) 2.Description Latest Adva

(2 views)

UMW AO4480 40V N-ChanneI MOSFET 1.Description The AO4480 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD Pro

(2 views)

UMW IRLML2246TR -20V P-ChanneI MOSFET 1.Description The IRLML2246TR uses advanced trench technology to provide excellent RDS(on) with low gate charge

(2 views)

UMW IRFL024ZTR 55V N-ChanneI MOSFET 1.Description This Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance

(2 views)

UMW IRLML6401TR -12V P-ChanneI MOSFET 1.1Features VDS (V)=-12V RDS(ON)<50mΩ(VGS=-4.5V) RDS(ON)<85mΩ(VGS=-2.5V) RDS(ON)<125mΩ(VGS=-1.8V) 1.2Features

(2 views)

UMW SI2308A 60V N-ChanneI MOSFET 1.Features VDS(V)=60V ID=3A(VGS=10V) RDS(ON)<80mΩ(VGS=10V), ID=3A RDS(ON)<95mΩ(VGS=4.5V), ID=1.9A 3.Pinning informa

(2 views)

UMW SI2300A 20V N-ChanneI MOSFET 1.Features V(BR)DSS=20V ID=6A RDS(ON)<25mΩ(VGS=4.5V) RDS(ON)<34mΩ(VGS=2.5V) TrenchFET Power MOSFET 3.Pinning inform

(2 views)

UMW SI2304A 30V N-ChanneI MOSFET 1.Description The SI2304A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operatio

(2 views)

UMW FDN352AP -30V P-ChanneI MOSFET 1.Description These devices are well suited for low voltage and battery pow-ered applications where low in-line po

(2 views)

UMW IRLML5203TR -30V P-ChanneI MOSFET 1.Description The IRLML5203TR uses advanced trench technology to provide excellent RDS(on) with low gate charge

(2 views)

UMW IRLML2803TR 30V N-ChanneI MOSFET 1.Description The IRLML2803TR uses advanced trench technology to provide excellent RDS(on) with low gate charge.

(2 views)