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FDN302P - P-ChanneI MOSFET

Datasheet Summary

Description

This P-Channel 2.5V has been optimized for power management applications with a wide range of gate drive voltage (2.5V

2.

Features

  • VDS (V)=-20V ID=-2.4A RDS(ON)=55mΩ(VGS=-4.5V) RDS(ON)=80mΩ(VGS=-2.5V) 3.Pinning information Pin Symbol.

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Datasheet Details

Part number FDN302P
Manufacturer UMW
File Size 742.34 KB
Description P-ChanneI MOSFET
Datasheet download datasheet FDN302P Datasheet
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UMW FDN302P P-ChanneI MOSFET 1.Description This P-Channel 2.5V has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V) 2.Features VDS (V)=-20V ID=-2.4A RDS(ON)=55mΩ(VGS=-4.5V) RDS(ON)=80mΩ(VGS=-2.5V) 3.Pinning information Pin Symbol Description SOT-23 3 1 G GATE 2 S SOURCE 3 D DRAIN 1 2 4.Maximum ratings (TA=25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (Note 1a) – Pulsed Maximum Power Dissipation(Note 1a) (Note 1b) Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) Thermal Resistance, Junction-to-Case (Note 1) Symbol VDSS VGSS ID PD TJ, TSTG RθJA RθJC D G S Value -20 ±12 -2.4 -10 0.5 0.
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