DATA SHEET SILICON POWER TRANSISTOR NEL200101-24.
IRF3710 - N-Channel MOSFET Transistor
isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF3710 ·FEATURES ·Drain Current –ID=57A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·St.A2SHB - N-Channel MOSFET
3.7A, 20V N N N-Channel Enhancement Mode Field Effect Transistor SMD Features ■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V ■High dense cell design fo.IRFZ44N - N-Channel MOSFET Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Volta.A1SHB - P-Channel Trench Power MOSFET
HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge.A09T - 30V N-CHANNEL MOSFET
A09T http://www.osen.net.cn 30V N-CHANNEL MOSFET Features: Fast switching speed High input impedance and low level drive Improved dv/dt c.MIX2018 - 4.8W single channel Class-F audio power amplifier
Machine Translated by Google MIX2018 4.8W Single Channel Class F Audio Power Amplifier describe MIX2018 is a high efficiency, filter-free 4.8W mono C.IRF3205 - N-Channel Trench Process Power MOSFET Transistor
IRF3205 ® Pb Free Plating Product IRF3205 Pb N-Channel Trench Process Power MOSFET Transistor General Description The IRF3205 is N-channel MOS F.HAA2018 - 5.3W output power single-channel audio power amplifier
HAA2018 AB /D ,5.3W HAA2018FM、AB/D、、 AB、D 5.3W。EMI D: FM。 -5.3W (VDD=5.0V, RL =2Ω,THD+N=10%) -3.2W (VDD=5.0V, RL =4Ω,THD+N=10%) HAA20.CS150N03 - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET ○R CS150N03 A8 General Description: CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced tr.8205A - Dual N-Channel MOSFET
Plastic-Encapsulate Mosfets N-Channel Enhancement Mode Power MOSFET Description The 8205A uses advanced trench technology to provide excellent RDS(ON.HY4008 - N-Channel MOSFET
HY4008W/A N-Channel Enhancement Mode MOSFET Features • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.A19T - P-Channel Enhancement Mode Power MOSFET
RM3401 P-Channel Enhancement Mode Power MOSFET Description The RM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge .IRFZ44 - N-Channel Trench Power MOSFET
IRFZ44 ® Pb Free Plating Product IRFZ44 Pb 45 Ampere Typical N-Channel Trench Power MOSFETs General Description The IRFZ44 is N-channel MOS Fiel.PF7708B - Single Channel WLED Driver
PF7708B Single Channel WLED Driver with Integrated Dimming MOSFET Preliminary Specification P4 FEATURES Wide Input Range: 9V to 30V Curre.A1SHB - P-Channel Enhancement Mode Power MOSFET
MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char.D452 - N-Channel MOSFET
AOD452 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD452 uses advanced trench technology and design to pro.RM9003B - Single channel constant current LED controller
LED constant current control chip RM9003B General Description : RM9003B is a one_stage LED constant current driving control chip which Compatible wit.B20N03 - N-Channel MOSFET
CHIPSET-IC.COM N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 12A G UIS, .RT8249C - Dual-Channel Synchronous DC/DC Step-Down Controller
® RT8249A/B/C Dual-Channel Synchronous DC/DC Step-Down Controller with 5V/3.3V LDOs General Description The RT8249A/B/C is a dual-channel step-down,.IRFB4110 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor IRFB4110,IIRFB4110 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.5mΩ ·Enhancement mode ·Fast Switching Sp.