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ZETEX
SOT23-6 - Package information
Package information - SOT23-6 Surface mounted, 6 pin package Package outline DIM A A1 A2 b C D E E1 L e e1 L Min. 0.90 0.00 0.90 0.35 0.09 2.70 2.20 .
Infineon
70S600P7 - MOSFET
IPD70R600P7S MOSFET 700VCoolMOSªP7PowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtoth.
Infineon
70S360P7 - MOSFET
IPA70R360P7S MOSFET 700VCoolMOSªP7PowerDevice CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesu.
Infineon Technologies
K75T60 - IGBT
IKW75N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr.
Infineon
4N04R8 - Power-Transistor
IPLU300N04S4-R8 OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating.
Huajing Microelectronics
BT40T60ANFU - Silicon FS Trench IGBT
Silicon FS Trench IGBT ○R BT40T60 ANFU General Description： VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) I.
Infineon
K50T60 - IGBT
IKW50N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr.
Infineon Technologies
H20R1202 - Reverse Conducting IGBT
IHW20N120R2 Soft Switching Series www.DataSheet4U.com Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode .
Infineon Technologies Corporation
06N03LA - Power Transistor
OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) prod.
Infineon
6R125P - Power Transistor
CoolMOSTM Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qua.
Infineon
K50T60A - IGBT
IKW50N60TA TRENCHSTOPTM Series q Low Loss DuoPack : IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery anti-parallel Emitter Co.
ETC
VS1838B - Infrared Receiver
Infrared Receiver Module : VS1838B 1. ● ● ● ● ● ● ； IC； ； ； ； ； 2. ■ ■ ■ : ( ( , , ； , , , ) ) 3. ： 4. ： www.DataSheet4U.com Infrared Receiver.
An Guang Electronics
AD009-01T - Infrared Remote Control OTP MCU
AD009-01X AD009-01X OTP MCU 、 AD009-01X4RISC, RC，12 I/O，SOP16/8，91/15， 。 、 1.8V~3.6V CMOS ， ：T ＜3uA，M ＜1uA（VDD=3.0V） .
Infineon
H20R1203 - Reverse conducting IGBT
ResonantSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode IHW20N120R3 Datasheet IndustrialPowerControl IHW20N120R3 ResonantSw.
Infineon
K20T60 - IGBT
IKP20N60T, IKB20N60T TrenchStop Series IKW20N60T Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel .
ST Microelectronics
80NF70 - N-CHANNEL Power MOSFET
STP80NF70 N-channel 68 V, 0.0082 Ω, 98 A, TO-220 STripFET™ II Power MOSFET Features Type STP80NF70 VDSS 68 V RDS(on) max < 0.0098 Ω ID 98 A ■ Ex.
Infineon
6R199P - Power Transistor
CoolMOS® Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qual.
Infineon Technologies
K75EEH5 - High speed 5 IGBT
IGBT Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode IKZ75N65EH5 650VDuoPackIGBTanddiode Hig.
Huajing Microelectronics
BT15T120ANF - Silicon FS Planar IGBT
Silicon FS Planar IGBT BT15T120ANF ○R General Description： Using HUAJING's proprietary trench design and advanced FS(field stop) technology, the 120.
