P-channel-enhanced Datasheet | Specifications & PDF Download

2301 18V P MOS VDS= -18V RDS(ON), Vgs@-4.5V, Ids@-1.0A =60mΩ@TYP RDS(ON), Vgs@-2.5V, Ids@-0.5A = 82mΩ@TYP 、   SOT- 23 S ou rc e ek Gat

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STMPS2242, STMPS2252 STMPS2262, STMPS2272 Enhanced dual-channel power switches Features ■ 100 mΩ high-side MOSFET switch ■ 500 mA/1000 mA continuous

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3401 RDS(ON), Vgs@-4.5V, Ids@-1.0A = 48mΩ@TYP RDS(ON), Vgs@-2.5V, Ids@-0.5A = 75mΩ@TYP P MOS 1   SOT-23 D Drain D 3 k 1 2 e G S

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1 4 2 5 3 6 D SHENZHEN FUMAN ELECTRONICS CO., LTD. TC4953 (：S&CIC0750) 20V P MOS D VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-3A = 62mΩ@TYP RDS(

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ASL3417SHN Enhanced three channel LED buck driver with limp-home Rev. 4 — 16 September 2019 Product data sheet 1. Introduction The ASL3417SHN is a

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80A/30V N ■ VDSS 30V ID 80A ■     TO-252 ■  TO-252 LN80N03 RDS(ON)(mΩ)TYP 5.5 @ VGS=10V, ID=25A ■ LN80N03 -55°C to +150°C

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10A/100V N ■ VDSS 100V ID 10A ■     TO-252 ■  LN10N10 RDS(ON)(mΩ)TYP 85@ VGS=10,ID=4.5A ■ LN10N10 ■ -55°C to +150°C 25

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STMPS2242, STMPS2252 STMPS2262, STMPS2272 Enhanced dual-channel power switches Features ■ 100 mΩ high-side MOSFET switch ■ 500 mA/1000 mA continuous

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STMPS2242, STMPS2252 STMPS2262, STMPS2272 Enhanced dual-channel power switches Features ■ 100 mΩ high-side MOSFET switch ■ 500 mA/1000 mA continuous

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TPT7710 1-Channel Enhanced High-Performance Digital Isolator Features Description • 150-Mbps Data Rate • 5-kV RMS Isolation Rating (WSOP) • ±200-kV

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SW036R10E8S N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 ⚫ High ruggedness ⚫ Low RDS(ON) (Typ 3.8mΩ)@VGS=10V ⚫ Low Gate C

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SW040R03VLT N-channel Enhanced mode TO-252 MOSFET Features ⚫ High ruggedness ⚫ Low RDS(ON) (Typ 5.1mΩ)@VGS=4.5V (Typ 3.7mΩ)@VGS=10V ⚫ Low Gate Charg

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80A/40V N VDSS 40V l l l l TO-252 l TO-252 LN80N04 ID RDS(ON)(mΩ)TYP 80A 5.4 @ VGS=10V,ID=20A LN80N04 -55°C to +150°C TO-252 2500 25

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DSD1608 SLES040 – JUNE 2002 8-CHANNEL, ENHANCED MULTIFORMAT, DELTA-SIGMA, DIGITAL-TO-ANALOG CONVERTER FEATURES D Supports DSD and PCM Formats D Suppo

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community TLC5971 SBVS146D – AUGUST 2010 – REVISED DECEMBER 2015 TLC59

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AiT Semiconductor Inc. AM032NS08H www.ait-ic.com MOSFET 85V 200A N-CHANNEL ENHANCED POWER MOSFET DESCRIPTION FEATURE The AM032NS08H is available

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BLP05N08G Step-Down Converter 1．Description , BLP05N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology wh

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5A/100V N ■ VDSS ID 100V 5A ■     ESOP8/SOT-23-6L ■  LN5N10 RDS(ON)(mΩ)TYP 135@ VGS=10V,ID=5A S 1 S 2 S 3 G4 ESOP8 (Top

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SHENZHEN FINE MADE ELECTRONICS GROUP CO., LTD. TC4953ES (：S&CIC1647) 11V P MOS VDS= -10V RDS(ON), Vgs@-4.5V, Ids@-3A = 85mΩ@TYP RDS(ON), Vgs@-2

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