P-channel-enhanced Datasheet | Specifications & PDF Download

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3401 RDS(ON), Vgs@-4.5V, Ids@-1.0A = 48mΩ@TYP RDS(ON), Vgs@-2.5V, Ids@-0.5A = 75mΩ@TYP P MOS 1   SOT-23 D Drain D 3 k 1 2 e G S

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+0 1 ) General Description： HM20N65F, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce t

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+0 1 ) General Description： HM16N60F, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce t

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SW3205B N-channel Enhanced mode TO-220 MOSFET Features TO-220  High ruggedness  Low RDS(ON) (Typ 4.8mΩ)@VGS=10V  Low Gate Charge (Typ 80nC)  Im

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1 4 2 5 3 6 D SHENZHEN FUMAN ELECTRONICS CO., LTD. TC4953 (：S&CIC0750) 20V P MOS D VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-3A = 62mΩ@TYP RDS(

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community TLC5971 SBVS146D – AUGUST 2010 – REVISED DECEMBER 2015 TLC59

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SHENZHEN FINE MADE ELECTRONICS GROUP CO., LTD. TC4953ES (：S&CIC1647) 11V P MOS VDS= -10V RDS(ON), Vgs@-4.5V, Ids@-3A = 85mΩ@TYP RDS(ON), Vgs@-2

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BLP05N08G Step-Down Converter 1．Description , BLP05N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology wh

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2301 18V P MOS VDS= -18V RDS(ON), Vgs@-4.5V, Ids@-1.0A =60mΩ@TYP RDS(ON), Vgs@-2.5V, Ids@-0.5A = 82mΩ@TYP 、   SOT- 23 S ou rc e ek Gat

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TPT774x 4-Channel Enhanced High-Performance Digital Isolator Features Description • 150-Mbps Data Rate • 5-kV RMS Isolation Rating (WSOP) • ±200-kV

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HM8N100F General Description： HM8N100F , the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce

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HM1 ) General Description： VDSS 250 V HM15N25F, the silicon N-channel Enhanced VDMOSFETs, is ID 15 A obtained by the self-aligned planar T

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HM2N65PR General Description： HM2N65PR the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce th

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HM4N70K General Description： HM4N70K the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the

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80A/30V N ■ VDSS 30V ID 80A ■     TO-252 ■  TO-252 LN80N03 RDS(ON)(mΩ)TYP 5.5 @ VGS=10V, ID=25A ■ LN80N03 -55°C to +150°C

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5A/100V N ■ VDSS ID 100V 5A ■     ESOP8/SOT-23-6L ■  LN5N10 RDS(ON)(mΩ)TYP 135@ VGS=10V,ID=5A S 1 S 2 S 3 G4 ESOP8 (Top

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60A/40V N VDSS 40V l l l l TO-252 l TO-252 LN60N04 ID RDS(ON)(mΩ)TYP 60A 7.3 @ VGS=10V,ID=20A LN60N04 -55°C to +150°C TO-252 2500 25

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2.1A/100V N ■ VDSS 100V ID 2.1A ■     SOT-23-3L ■  LN2322 RDS(ON)(mΩ)TYP 400@ VGS=10 1500@ VGS=4.5 D G S  G D S SOT23-3L 1

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