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P-channel-enhanced datasheet

P-channel-enhanced datasheet

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FUMAN ELECTRONICS

TC4953 - 20V P-channel enhanced MOS FET

1 4 2 5 3 6 D SHENZHEN FUMAN ELECTRONICS CO., LTD. TC4953 (:S&CIC0750) 20V P MOS D VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-3A = 62mΩ@TYP RDS(.
1.0 · rating-1
ST Microelectronics

STMPS2262 - Enhanced dual-channel power switche

STMPS2242, STMPS2252 STMPS2262, STMPS2272 Enhanced dual-channel power switches Features ■ 100 mΩ high-side MOSFET switch ■ 500 mA/1000 mA continuous .
1.0 · rating-1
Samwin

SW3205B - N-channel Enhanced mode TO-220 MOSFET

SW3205B N-channel Enhanced mode TO-220 MOSFET Features TO-220  High ruggedness  Low RDS(ON) (Typ 4.8mΩ)@VGS=10V  Low Gate Charge (Typ 80nC)  Im.
1.0 · rating-1
natlinear

LN10N10 - 10A/100V withstand voltage N-channel enhanced FET

10A/100V N ■ VDSS 100V ID 10A ■     TO-252 ■  LN10N10 RDS(ON)(mΩ)TYP 85@ VGS=10,ID=4.5A ■ LN10N10 ■ -55°C to +150°C 25.
1.0 · rating-1
natlinear

LN5N10 - 5A/100V withstand voltage N-channel enhanced FET

5A/100V N ■ VDSS ID 100V 5A ■     ESOP8/SOT-23-6L ■  LN5N10 RDS(ON)(mΩ)TYP 135@ VGS=10V,ID=5A S 1 S 2 S 3 G4 ESOP8 (Top .
1.0 · rating-1
natlinear

LN80N03 - 80A/30V withstand voltage N-channel enhanced FET

80A/30V N ■ VDSS 30V ID 80A ■     TO-252 ■  TO-252 LN80N03 RDS(ON)(mΩ)TYP 5.5 @ VGS=10V, ID=25A ■ LN80N03 -55°C to +150°C .
1.0 · rating-1
natlinear

LN60N04 - 60A/40V withstand voltage N-channel enhanced FET

60A/40V N VDSS 40V l l l l TO-252 l TO-252 LN60N04 ID RDS(ON)(mΩ)TYP 60A 7.3 @ VGS=10V,ID=20A LN60N04 -55°C to +150°C TO-252 2500 25 .
1.0 · rating-1
Samwin

SW036R10E8S - N-channel Enhanced mode TO-220/TO-263 MOSFET

SW036R10E8S N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 ⚫ High ruggedness ⚫ Low RDS(ON) (Typ 3.8mΩ)@VGS=10V ⚫ Low Gate C.
1.0 · rating-1
BELLING

BLP05N08G - N-channel Enhanced Power MOSFET

BLP05N08G Step-Down Converter 1.Description , BLP05N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology wh.
1.0 · rating-1
Samwin

SW040R03VLT - N-channel Enhanced mode TO-252 MOSFET

SW040R03VLT N-channel Enhanced mode TO-252 MOSFET Features ⚫ High ruggedness ⚫ Low RDS(ON) (Typ 5.1mΩ)@VGS=4.5V (Typ 3.7mΩ)@VGS=10V ⚫ Low Gate Charg.
1.0 · rating-1
Burr-Brown Corporation

DSD1608 - 8-CHANNEL/ ENHANCED MULTIFORMAT/ DELTA-SIGMA/ DIGITAL-TO-ANALOG CONVERTER

DSD1608 SLES040 – JUNE 2002 8-CHANNEL, ENHANCED MULTIFORMAT, DELTA-SIGMA, DIGITAL-TO-ANALOG CONVERTER FEATURES D Supports DSD and PCM Formats D Suppo.
1.0 · rating-1
STMicroelectronics

STMPS2151 - Enhanced single channel power switche

STMPS2141, STMPS2151, STMPS2161, STMPS2171 Enhanced single channel power switches Datasheet - production data Description SOT23-5L SO-8 The STMPS.
1.0 · rating-1
FUMAN ELECTRONICS

TC4953ES - 11V P-channel enhanced dual MOSFET

SHENZHEN FINE MADE ELECTRONICS GROUP CO., LTD. TC4953ES (:S&CIC1647) 11V P MOS VDS= -10V RDS(ON), Vgs@-4.5V, Ids@-3A = 85mΩ@TYP RDS(ON), Vgs@-2.
1.0 · rating-1
ChipSourceTek

3401 - P-channel-enhanced MOS field-effect transistor

3401 RDS(ON), Vgs@-4.5V, Ids@-1.0A = 48mΩ@TYP RDS(ON), Vgs@-2.5V, Ids@-0.5A = 75mΩ@TYP P MOS 1   SOT-23 D Drain D 3 k 1 2 e G S .
1.0 · rating-1
natlinear

LN80N04 - 80A/40V withstand voltage N-channel enhanced FET

80A/40V N VDSS 40V l l l l TO-252 l TO-252 LN80N04 ID RDS(ON)(mΩ)TYP 80A 5.4 @ VGS=10V,ID=20A LN80N04 -55°C to +150°C TO-252 2500 25 .
1.0 · rating-1
ETCTI

DSD1608 - 8-Channel Enhanced MultiFormat Delta-Sigma Digital-to-Analog Converter

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1.0 · rating-1
ST Microelectronics

STMPS2252 - Enhanced dual-channel power switche

STMPS2242, STMPS2252 STMPS2262, STMPS2272 Enhanced dual-channel power switches Features ■ 100 mΩ high-side MOSFET switch ■ 500 mA/1000 mA continuous .
1.0 · rating-1
Texas Instruments

TLC5971 - 12-Channel 16-Bit Enhanced Spectrum PWM RGB LED Driver

Product Folder Sample & Buy Technical Documents Tools & Software Support & Community TLC5971 SBVS146D – AUGUST 2010 – REVISED DECEMBER 2015 TLC59.
1.0 · rating-1
natlinear

LN2322 - 2.1A/100V withstand voltage N-channel enhanced FET

2.1A/100V N ■ VDSS 100V ID 2.1A ■     SOT-23-3L ■  LN2322 RDS(ON)(mΩ)TYP 400@ VGS=10 1500@ VGS=4.5 D G S  G D S SOT23-3L 1 .
1.0 · rating-1
natlinear

LN1N10 - 1A/100V withstand voltage N-channel enhanced FET

1A/100V N LN1N10 ■ VDSS 100V ID RDS(ON)(mΩ)TYP 630@ VGS=4.5V 1A 580@ VGS=10V ■     SOT-23-3L ■  SOT-23-3L D 3 D ■ G S 1 2 .
1.0 · rating-1
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