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TC4953 - 20V P-channel enhanced MOS FET
1 4 2 5 3 6 D SHENZHEN FUMAN ELECTRONICS CO., LTD. TC4953 (:S&CIC0750) 20V P MOS D VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-3A = 62mΩ@TYP RDS(.STMPS2262 - Enhanced dual-channel power switche
STMPS2242, STMPS2252 STMPS2262, STMPS2272 Enhanced dual-channel power switches Features ■ 100 mΩ high-side MOSFET switch ■ 500 mA/1000 mA continuous .SW3205B - N-channel Enhanced mode TO-220 MOSFET
SW3205B N-channel Enhanced mode TO-220 MOSFET Features TO-220 High ruggedness Low RDS(ON) (Typ 4.8mΩ)@VGS=10V Low Gate Charge (Typ 80nC) Im.LN10N10 - 10A/100V withstand voltage N-channel enhanced FET
10A/100V N ■ VDSS 100V ID 10A ■ TO-252 ■ LN10N10 RDS(ON)(mΩ)TYP 85@ VGS=10,ID=4.5A ■ LN10N10 ■ -55°C to +150°C 25.LN5N10 - 5A/100V withstand voltage N-channel enhanced FET
5A/100V N ■ VDSS ID 100V 5A ■ ESOP8/SOT-23-6L ■ LN5N10 RDS(ON)(mΩ)TYP 135@ VGS=10V,ID=5A S 1 S 2 S 3 G4 ESOP8 (Top .LN80N03 - 80A/30V withstand voltage N-channel enhanced FET
80A/30V N ■ VDSS 30V ID 80A ■ TO-252 ■ TO-252 LN80N03 RDS(ON)(mΩ)TYP 5.5 @ VGS=10V, ID=25A ■ LN80N03 -55°C to +150°C .LN60N04 - 60A/40V withstand voltage N-channel enhanced FET
60A/40V N VDSS 40V l l l l TO-252 l TO-252 LN60N04 ID RDS(ON)(mΩ)TYP 60A 7.3 @ VGS=10V,ID=20A LN60N04 -55°C to +150°C TO-252 2500 25 .SW036R10E8S - N-channel Enhanced mode TO-220/TO-263 MOSFET
SW036R10E8S N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 ⚫ High ruggedness ⚫ Low RDS(ON) (Typ 3.8mΩ)@VGS=10V ⚫ Low Gate C.BLP05N08G - N-channel Enhanced Power MOSFET
BLP05N08G Step-Down Converter 1.Description , BLP05N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology wh.SW040R03VLT - N-channel Enhanced mode TO-252 MOSFET
SW040R03VLT N-channel Enhanced mode TO-252 MOSFET Features ⚫ High ruggedness ⚫ Low RDS(ON) (Typ 5.1mΩ)@VGS=4.5V (Typ 3.7mΩ)@VGS=10V ⚫ Low Gate Charg.DSD1608 - 8-CHANNEL/ ENHANCED MULTIFORMAT/ DELTA-SIGMA/ DIGITAL-TO-ANALOG CONVERTER
DSD1608 SLES040 – JUNE 2002 8-CHANNEL, ENHANCED MULTIFORMAT, DELTA-SIGMA, DIGITAL-TO-ANALOG CONVERTER FEATURES D Supports DSD and PCM Formats D Suppo.STMPS2151 - Enhanced single channel power switche
STMPS2141, STMPS2151, STMPS2161, STMPS2171 Enhanced single channel power switches Datasheet - production data Description SOT23-5L SO-8 The STMPS.TC4953ES - 11V P-channel enhanced dual MOSFET
SHENZHEN FINE MADE ELECTRONICS GROUP CO., LTD. TC4953ES (:S&CIC1647) 11V P MOS VDS= -10V RDS(ON), Vgs@-4.5V, Ids@-3A = 85mΩ@TYP RDS(ON), Vgs@-2.3401 - P-channel-enhanced MOS field-effect transistor
3401 RDS(ON), Vgs@-4.5V, Ids@-1.0A = 48mΩ@TYP RDS(ON), Vgs@-2.5V, Ids@-0.5A = 75mΩ@TYP P MOS 1 SOT-23 D Drain D 3 k 1 2 e G S .LN80N04 - 80A/40V withstand voltage N-channel enhanced FET
80A/40V N VDSS 40V l l l l TO-252 l TO-252 LN80N04 ID RDS(ON)(mΩ)TYP 80A 5.4 @ VGS=10V,ID=20A LN80N04 -55°C to +150°C TO-252 2500 25 .STMPS2252 - Enhanced dual-channel power switche
STMPS2242, STMPS2252 STMPS2262, STMPS2272 Enhanced dual-channel power switches Features ■ 100 mΩ high-side MOSFET switch ■ 500 mA/1000 mA continuous .TLC5971 - 12-Channel 16-Bit Enhanced Spectrum PWM RGB LED Driver
Product Folder Sample & Buy Technical Documents Tools & Software Support & Community TLC5971 SBVS146D – AUGUST 2010 – REVISED DECEMBER 2015 TLC59.LN2322 - 2.1A/100V withstand voltage N-channel enhanced FET
2.1A/100V N ■ VDSS 100V ID 2.1A ■ SOT-23-3L ■ LN2322 RDS(ON)(mΩ)TYP 400@ VGS=10 1500@ VGS=4.5 D G S G D S SOT23-3L 1 .LN1N10 - 1A/100V withstand voltage N-channel enhanced FET
1A/100V N LN1N10 ■ VDSS 100V ID RDS(ON)(mΩ)TYP 630@ VGS=4.5V 1A 580@ VGS=10V ■ SOT-23-3L ■ SOT-23-3L D 3 D ■ G S 1 2 .