P2N60 Datasheet | Specifications & PDF Download

Aug 2006 PFP2N60 / PFF2N60 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances 

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St

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www.DataSheet4U.com STP2N60 STP2N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP2N60 STP2N60FI s s s s s V DSS 600 V 600 V R DS( on

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Philips Semiconductors Product specification -------------------------------------------------------------------------------------------------------

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FQP2N60C / FQPF2N60C — N-Channel QFET® MOSFET FQP2N60C / FQPF2N60C N-Channel QFET® MOSFET 600 V, 2 A, 4.7 Ω December 2013 Description This N-Channe

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP2N60E/D Designer's TMOS E-FET .™ Power Field Effect Transisto

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MTP2N60E Designer’s™ Data Sheet TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an a

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY2N60P IXTP2N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg

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www.DataSheet4U.com DFP2N60 N-Channel MOSFET Features ■ ■ ■ ■ ■ High ruggedness RDS(on) (Max 5.5 Ω )@VGS=10V Gate Charge (Typical 15nC) Improved dv/

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Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 600 VG

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Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 600 VG

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MDP2N60/MDF2N60 N-channel MOSFET 600V MDP2N60/MDF2N60 N-Channel MOSFET 600V, 2.0A, 4.5Ω General Description These N-channel MOSFET are produced using

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DTP2N60/DTP2N60F/DTU2N60/DTL2N60 www.din-tek.jp Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600

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DTP2N60/DTP2N60F/DTU2N60/DTL2N60 www.din-tek.jp Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600

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HFP2N60U HFP2N60U 600V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Ver

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isc N-Channel MOSFET Transistor IXTP2N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.1Ω@VGS=10V ·Fully characterized avalanche voltag

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HFP2N60S March 2014 HFP2N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ  ȍ ID = 2.0 A FEATURES ƒ Originative New Design ƒ Superior Avala

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FQP2N60 April 2000 QFET FQP2N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc

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