P2N60 Datasheet | Specifications & PDF Download

FQP2N60C / FQPF2N60C — N-Channel QFET® MOSFET FQP2N60C / FQPF2N60C N-Channel QFET® MOSFET 600 V, 2 A, 4.7 Ω December 2013 Description This N-Channe

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www.DataSheet4U.com DFP2N60 N-Channel MOSFET Features ■ ■ ■ ■ ■ High ruggedness RDS(on) (Max 5.5 Ω )@VGS=10V Gate Charge (Typical 15nC) Improved dv/

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SLP2N60C / SLF2N60C 600V N-Channel MOSFET General Description This Pow er MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

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2A, 600V, N 2N60 Series N-Channel MOSFET FQP2N60C FQPF2N60C H H2N60P H2N60F 2N60 HAOHAI P: TO-220AB F: TO-220FP 50Pcs 1000Pcs

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FQP2N60 April 2000 QFET FQP2N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc

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www.DataSheet4U.com SSP2N60B/SSS2N60B SSP2N60B/SSS2N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effec

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www.DataSheet4U.com STP2N60 STP2N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP2N60 STP2N60FI s s s s s V DSS 600 V 600 V R DS( on

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isc N-Channel MOSFET Transistor IXTP2N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.1Ω@VGS=10V ·Fully characterized avalanche voltag

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP2N60Z

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP2N60Z

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY2N60P IXTP2N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg

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FQP2N60/FQPF2N60 600V,2A N-Channel MOSFET General Description Product Summary The FQP2N60 & FQPF2N60 have been fabricated using an advanced high vo

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HIGH VOLTAGE N-Channel MOSFET      WFP2N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics  □ Exte

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improve

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HFP2N60 June 2005 HFP2N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 2.0 A FEATURES ‰ Originative New Design ‰ Superior Avalanch

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Philips Semiconductors Product specification -------------------------------------------------------------------------------------------------------

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Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 600 VG

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