P2N60 Datasheet | Specifications & PDF Download

www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Cha

Rating: 1 ★ (5 votes)

2A, 600V, N 2N60 Series N-Channel MOSFET FQP2N60C FQPF2N60C H H2N60P H2N60F 2N60 HAOHAI P: TO-220AB F: TO-220FP 50Pcs 1000Pcs

Rating: 1 ★ (5 votes)

www.DataSheet4U.com DFP2N60 N-Channel MOSFET Features ■ ■ ■ ■ ■ High ruggedness RDS(on) (Max 5.5 Ω )@VGS=10V Gate Charge (Typical 15nC) Improved dv/

Rating: 1 ★ (4 votes)

FQP2N60/FQPF2N60 600V,2A N-Channel MOSFET General Description Product Summary The FQP2N60 & FQPF2N60 have been fabricated using an advanced high vo

Rating: 1 ★ (4 votes)

Rating: 1 ★ (3 votes)

FQP2N60 April 2000 QFET FQP2N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc

Rating: 1 ★ (3 votes)

FQP2N60C / FQPF2N60C — N-Channel QFET® MOSFET FQP2N60C / FQPF2N60C N-Channel QFET® MOSFET 600 V, 2 A, 4.7 Ω December 2013 Description This N-Channe

Rating: 1 ★ (3 votes)

Rating: 1 ★ (3 votes)

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP2N60E/D Designer's TMOS E-FET .™ Power Field Effect Transisto

Rating: 1 ★ (3 votes)

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improve

Rating: 1 ★ (3 votes)

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP2N60Z

Rating: 1 ★ (3 votes)

www.DataSheet4U.com STP2N60 STP2N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP2N60 STP2N60FI s s s s s V DSS 600 V 600 V R DS( on

Rating: 1 ★ (3 votes)

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY2N60P IXTP2N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg

Rating: 1 ★ (3 votes)

PJP2N60 / PJF2N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 2A , 600V, RDS(ON)=4.6Ω@VGS=10V, ID=1A • Low ON Resistance • Fast Switching • Low

Rating: 1 ★ (3 votes)

HFP2N60S March 2014 HFP2N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ  ȍ ID = 2.0 A FEATURES ƒ Originative New Design ƒ Superior Avala

Rating: 1 ★ (3 votes)

Philips Semiconductors Product specification -------------------------------------------------------------------------------------------------------

Rating: 1 ★ (2 votes)

SLP2N60C / SLF2N60C 600V N-Channel MOSFET General Description This Pow er MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

Rating: 1 ★ (2 votes)

DTP2N60SJ/DTP2N60FSJ/DTU2N60SJ/DTL2N60SJ ZZZGLQ WHNMS /$IBOOFM
607
%4 4VQFS
+VODUJPO
Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 600 VG

Rating: 1 ★ (2 votes)

TSP2N60MZ / TSF2N60MZ 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology

Rating: 1 ★ (2 votes)

SLP2N60UZ / SLF2N60UZ SLP2N60UZ / SLF2N60UZ 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced plana

Rating: 1 ★ (2 votes)