P5N50 Datasheet | Specifications & PDF Download

sales.Mr.wang13826508770 www.sztssd.com AP5N50BD 500V N-Channel Enhancement Mode MOSFET Description The AP5N50BD is silicon N-channel Enhanced VDM

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast re

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU5N50P IXTY5N50P IXTA5N50P IXTP5N50P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS d

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Description AP5N50CD 500V N-Channel Enhancement Mode MOSFET The AP5N50CD is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned p

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FQP5N50/FQPF5N50 500V, 5A N-Channel MOSFET General Description Product Summary The FQP5N50 & FQPF5N50 have been fabricated using an advanced high v

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast re

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 1.4Ω@VGS=10V ·Fully characterized avalanche voltage and curre

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HFP5N50S OCT 2008 HFP5N50S 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ  ȍ ID = 5.0 A FEATURES ‰ Originative New Design ‰ Superior Avalanc

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HFP5N50U HFP5N50U 500V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Ver

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FQP5N50C/FQPF5N50C QFET FQP5N50C/FQPF5N50C 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors

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www.DataSheet4U.com Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement Mode IXTA 5N50P IXTP 5N50P IXTY 5N50P VDSS = 500 V

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FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET December 2007 FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET 500V, 4.5A, 1.55Ω Features • RDS(on) = 1.2

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FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET November2009 FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET 500V, 4A, 2.0 Features • RDS(on) = 1.65 (

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FDP5N50 / FDPF5N50 N-Channel MOSFET FDP5N50 / FDPF5N50 N-Channel MOSFET 500V, 5A, 1.4Ω Features • RDS(on) = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A • Low

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FDP5N50NZ / FDPF5N50NZ — N-Channel UniFETTM II MOSFET FDP5N50NZ / FDPF5N50NZ N-Channel UniFETTM II MOSFET 500 V, 4.5 A, 1.5 Ω Features • R DS(on) = 1

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast re

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P5N50C ® Pb Free Plating Product P5N50C 5 Ampere 500 Volt N-Channel MOSFET { ̻ Pb Features ̰ ̰ ̰ ̰ ̰ RDS(on) (Max 1.5 ˟ )@VGS=10V Gate Charge (T

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SLF5N50S / SLP5N50S SLF5N50S / SLP5N50S 650V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar st

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MDP5N50 N-channel MOSFET 500V MDP5N50 N-Channel MOSFET 500V, 5.0 A, 1.4Ω General Description The MDP5N50 uses advanced Magnachip’s MOSFET Technology

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