PD100 Datasheet | Specifications & PDF Download

MSPDxxxx-x Series Sampling Phase Detector Modules Features  Phase Locking to 22 GHz  Phase Locks DRO’s and VCO’s  Fully Integrated Module  Broadba

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FPD1000AS 1W PACKAGED POWER PHEMT • PERFORMANCE (1.8 GHz) ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA A

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1N4156, 1N4157, 1N4453, 1N4829, 1N4830, 1N5179, MPD100-MPD400A High-reliability discrete products and engineering services since 1977 TIGHT TOLERANC

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1N4156, 1N4157, 1N4453, 1N4829, 1N4830, 1N5179, MPD100-MPD400A High-reliability discrete products and engineering services since 1977 TIGHT TOLERANC

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CMPD1001 CMPD1001A CMPD1001S HIGH CURRENT SWITCHING DIODE Central DESCRIPTION: TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR CMPD1001 series ty

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MSPDxxxx-x Series Sampling Phase Detector Modules Features  Phase Locking to 22 GHz  Phase Locks DRO’s and VCO’s  Fully Integrated Module  Broadba

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PRELIMINARY • PERFORMANCE (1.8 GHz) ♦ 40 dBm Output Power (P1dB) ♦ 11 dB Power Gain (G1dB) ♦ -44 dBc WCDMA ACPR at 30 dBm output power ♦ 180 to 300 mA

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PRELIMINARY • FEATURES (1.8 GHz) ♦ 31 dBm Linear Output Power ♦ 16 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 41 dBm Output IP3 ♦ Maximum Stable Gain of

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Plate Type and Finger Terminal Type High Voltage RF Power Capacitors Class 1 Ceramic Plate Type Finger Terminal Type QUICK REFERENCE DATA DESCRIPTIO

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QPD1003 500W, 50V, 1.2 – 1.4 GHz, GaN RF IMFET Product Overview The QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which opera

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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Gr

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