Panasonic Semiconductor 2SK Datasheet | Specifications & PDF Download

Silicon Junction FETs (Small Signal) 2SK1103 Silicon N-Channel Junction FET For switching Complementary to 2SJ163 0.65±0.15 +0.2 unit: mm 0.65±0.15

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www.DataSheet4U.com Power MOSFETs 2SK3318 Silicon N-channel power MOSFET (0.7) Unit: mm 15.0±0.3 11.0±0.2 5.0±0.2 (3.2) For switching ■ Features •

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Silicon Junction FETs (Small Signal) 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 s Features q Low ON-resistance q Lo

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This product complies with the RoHS Directive (EU 2002/95/EC). Power MOS FETs 2SK3268 Silicon N-channel power MOS FET Plehtatsp:e/M/vaiiwsniwttefw.

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Silicon MOS FETs (Small Signal) 2SK601 Silicon N-Channel MOS FET For switching unit: mm s Features q Low ON-resistance RDS(on) q High-speed switchin

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Silicon Junction FETs (Small Signal) 2SK1860 Silicon N-Channel Junction FET Unit: mm For impedance conversion in low frequency For electret capacito

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Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 130mJ q VGSS = ±30V guaranteed q

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Power F-MOS FETs 2SK2340 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistan

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Power MOSFETs 2SK3269 N-channel enhancement mode MOSFET ■ Features • Low on-resistance, low Qg • High avalanche resistance (1.4) Unit: mm 10.5±0.3 4

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Silicon Junction FETs (Small Signal) 2SK374 Silicon N-Channel Junction FET For low-frequency amplification For switching 0.65±0.15 +0.2 unit: mm 0.6

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Silicon MOS FETs (Small Signal) 2SK615 Silicon N-Channel MOS FET For switching unit: mm s Features q Low ON-resistance q High-speed switching q Allo

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Silicon Junction FETs (Small Signal) 2SK0065 (2SK65) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor

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Silicon Junction FETs (Small Signal) 2SK1842 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor 0.65±0.15 +

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Power F-MOS FETs 2SK2126 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 100mJ q VGSS = ±30V guaranteed q

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Power F-MOS FETs 2SK2128 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = ±20V guaranteed q H

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Power F-MOS FETs 2SK2339 2SK2339 Silicon N-Channel Power F-MOS s Features q Avalanche q Low q No Unit : mm 8.5±0.2 6.0±0.5 3.4±0.3 1.0±0.1 energy c

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Power F-MOS FETs 2SK2374 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistan

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Power F-MOS FETs 2SK2375 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistan

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Power F-MOS FETs 2SK2383 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistan

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