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F2001 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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polyfet rf devices LK702 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mil.AG6M - Silicon Rectifier Cells with polysiloxan passivation
AG 6A … AG6M Silicon Rectifier Cells with polysiloxan passivation Silizium-Gleichrichterzellen mit Polysiloxan-Passivierung Nominal current – Nennstr.LY402 - SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
polyfet rf devices LY402 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mil.430P305X5050 - Metalized Polyester Film Capacitors Wrap-and-Fill
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Type 430P Vishay Sprague Metalized Polyester Film Capacitors Wrap-and-Fill FEATURES • Economical • Extensive standard ratings • Rugged construction •.SK702 - SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
polyfet rf devices SK702 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mil.SK703 - SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
polyfet rf devices SK703 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mil.SP201 - SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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