.
Prisemi
15
PPM3FD20V1E - P-Channel MOSFET
Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. VDS(V) -20 MOSFET Product Summary .
Prisemi
6
PPM8PN30V12 - P-Channel MOSFET
Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. VDS(V) -30 MOSFET Product Summary R.
Prisemi
5
PPM8P30V8 - P-Channel MOSFET
PPM8P30V8 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D（5、6、7、8） VDS(V) -30 MOSFET.
Prisemi
3
PPM6N20V10 - P-Channel MOSFET
Description The enhancement mode MOS is extremely high density cell and low on-resistance. PPM6N20V10 P-Channel MOSFET VDS(V) -20 MOSFET Product Su.
Prisemi
3
PPMT2301 - P-Channel MOSFET
Description Trench Power LV MOSFET technology High Power and Current handing capability Low Gate Charge MOSFET Product Summary VDS(V) -20 RDS.
Prisemi
3
PPM523T201E0 - P-Channel MOSFET
Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. VDS(V) -20 MOSFET Product Summary .
Prisemi
2
PPMS8N20V3 - P-Channel MOSFET
Description PPMS8N20V3 P-Channel 1.8-V (G-S) MOSFET with Schottky Diode VDS(V) -20 MOSFET Product Summary RDS(on)(Ω) ID(A) 0.110 @ VGS=-4.5V -2.
Prisemi
2
PPMT30V4 - P-Channel MOSFET
PPMT30V4 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D（3） VDS(V) -30 MOSFET Produc.
Prisemi
1
PPMT2307 - P-Channel MOSFET
Description Trench Power LV MOSFET technology High density cell design for Low RDS(ON) High Speed switching MOSFET Product Summary VDS(V) -30 .
Prisemi
1
PPMET20V08 - P-Channel MOSFET
PPMET20V08 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D（3） VDS(V) -20 MOSFET Prod.
Prisemi
1
PPM723T30V02E - P-Channel MOSFET
Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) -30 .
Prisemi
1
PPM8P40V8 - P-Channel MOSFET
Description The PPM8P40V8 uses advanced trench technology to provide excellent RDS(on), low gate charge and operation with gate voltage as low as -4.5.
Prisemi
1
PPM6N20V5 - P-Channel MOSFET
PPM6N20V5 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. VDS(V) -20 MOSFET Product Sum.
Prisemi
1
PPM6N12V10 - P-Channel MOSFET
Description The enhancement mode MOS is extremely high density cell and low on-resistance. PPM6N12V10 P-Channel MOSFET VDS(V) -12 MOSFET Product Su.