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Prisemi

PPM8P40V8 - P-Channel MOSFET

Description The PPM8P40V8 uses advanced trench technology to provide excellent RDS(on), low gate charge and operation with gate voltage as low as -4.5
(4 views)
Prisemi

PPMT2307 - P-Channel MOSFET

Description  Trench Power LV MOSFET technology  High density cell design for Low RDS(ON)  High Speed switching MOSFET Product Summary VDS(V) -30
(3 views)
Prisemi

PPM8P30V8 - P-Channel MOSFET

PPM8P30V8 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D(5、6、7、8) VDS(V) -30 MOSFET
(3 views)
Prisemi

PPMT2301 - P-Channel MOSFET

Description  Trench Power LV MOSFET technology  High Power and Current handing capability  Low Gate Charge MOSFET Product Summary VDS(V) -20 RDS
(2 views)
Prisemi

PPMT30V4 - P-Channel MOSFET

PPMT30V4 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D(3) VDS(V) -30 MOSFET Produc
(2 views)
Prisemi

PPM6N20V5 - P-Channel MOSFET

PPM6N20V5 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. VDS(V) -20 MOSFET Product Sum
(2 views)
Prisemi

PPMET20V08 - P-Channel MOSFET

PPMET20V08 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D(3) VDS(V) -20 MOSFET Prod
(1 views)

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