RB-601 Datasheet | Specifications & PDF Download

PROFET™ +24 V BTT6010-1ERB Smart High-Side Power Switch, Single Channel 10 mΩ Package PG-TDSO-14 Marking 6010-1ERB 1 Overview Application • Suitab

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Wuxi Gwok Semiconductor Co.,Ltd GC3M0160120D Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • High blocking voltage with low On-

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WNSC2D601200W Silicon Carbide Diode Rev.01 - 26 February 2024 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO247-2L

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C3M0160120J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode TAB Drain Features • 3rd generation Solicon Carbide (SiC

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Multi-CD control High power cassette player with RDS tuner ENGLISH Reproductor de cassette de alta potencia con control múltiple de CD con sintonizad

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SS150TA60110, SS150TC60110, SS150TI60110 Silicon Carbide Schottky Diode Part Number SS150TA60110 SS150TC60110 SS150TI60110 VRRM (V) 600 600 600 IF(AV

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community TPS79601, TPS79613, TPS79618, TPS79625 TPS79628, TPS79630, T

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WNSCM160120W N-Channel Silicon Carbide MOSFET Rev.01 - 30 November 2022 Product data sheet 1. General description Silicon Carbide MOSFET in a 3-lead

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E3M0160120K Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET techno

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community TPS79601, TPS79613, TPS79618, TPS79625 TPS79628, TPS79630, T

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community TPS79601, TPS79613, TPS79618, TPS79625 TPS79628, TPS79630, T

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WNSC2M60120R-A N-Channel Silicon Carbide MOSFET Rev.01 - 13 November 2024 Product data sheet 1. General description Silicon Carbide MOSFET in a TO24

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SS150TA60110, SS150TC60110, SS150TI60110 Silicon Carbide Schottky Diode Part Number SS150TA60110 SS150TC60110 SS150TI60110 VRRM (V) 600 600 600 IF(AV

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SS150TA60110, SS150TC60110, SS150TI60110 Silicon Carbide Schottky Diode Part Number SS150TA60110 SS150TC60110 SS150TI60110 VRRM (V) 600 600 600 IF(AV

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WNSC2M60120B7 N-Channel Silicon Carbide MOSFET Rev.02 - 22 November 2023 Product data sheet 1. General description Silicon Carbide MOSFET in a TO263

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E3M0160120D Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology •

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C3M0160120K1 Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • Optimized package with separate driver source pin • Lower profile TO

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www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 RBV600D - RBV610D SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 6.0 Ampere

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